NVMFS5C430NL
Power MOSFET
40 V, 1.4 mW, 200 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• NVMFS5C430NLWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
1.4 mW @ 10 V
2.2 mW @ 4.5 V
40 V
200 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
D (5,6)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
I
200
A
C
D
G (4)
q
JC
T
C
= 100°C
140
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
= 25°C
P
110
53
W
A
D
S (1,2,3)
N−CHANNEL MOSFET
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
38
q
JA
T = 100°C
A
27
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.8
1.9
900
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
D
1
S
S
S
G
D
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
XXXXXX
AYWZZ
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
+ 175
Source Current (Body Diode)
I
S
120
493
A
D
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
XXXXXX = 5C430L
XXXXXX = (NVMFS5C430NL) or
XXXXXX = 430LWF
Energy (I
= 15 A)
L(pk)
Single Pulse Drain−to−Source Voltage
(t = 10 ms)
p
V
DSM
48
V
XXXXXX = (NVMFS5C430NLWF)
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
R
1.4
40
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
February, 2017 − Rev. 3
NVMFS5C430NL/D