Datasheet > NVMFS5C410NAFT1G

NVMFS5C410NAFT1G

更新时间： 2024-01-27 00:00:49

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	123K
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Power MOSFET

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数据手册

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NVMFS5C410NAFT1G 数据手册

NVMFS5C410N

Power MOSFET

40 V, 0.92 mW, 300 A, Single N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFS5C410NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

40 V

0.92 mW @ 10 V

300 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5,6)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

300

G (4)

= 100°C

212

(Notes 1, 3)

Steady

State

Power Dissipation

= 25°C

166

S (1,2,3)

N−CHANNEL MOSFET

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

MARKING

DIAGRAM

Power Dissipation

T = 25°C

3.9

1.9

900

(Notes 1 & 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

DFN5

(SO−8FL)

CASE 488AA

STYLE 1

XXXXXX

AYWZZ

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

+ 175

Source Current (Body Diode)

158

578

Single Pulse Drain−to−Source Avalanche

XXXXXX = 5C410N

XXXXXX = (NVMFS5C410N) or

XXXXXX = 410NWF

Energy (I

= 34 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

XXXXXX = (NVMFS5C410NWF)

= Assembly Location

= Year

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Junction−to−Case − Steady State

0.9

°C/W

Junction−to−Ambient − Steady State (Note 2)

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

February, 2017 − Rev. 2

NVMFS5C410N/D

12 3 4 5 6

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与NVMFS5C410NAFT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5C410NL	ONSEMI	获取价格	Power MOSFET
NVMFS5C410NL_17	ONSEMI	获取价格	Power MOSFET
NVMFS5C410NLAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C410NLT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C410NLT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C410NLWFAFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C410NLWFET1G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，330A，0.82mΩ
NVMFS5C410NLWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS5C410NLWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS5C410NT1G	ONSEMI	获取价格	Power MOSFET

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