5秒后页面跳转
捷配首页

Datasheet > NVMFS5833NWFT1G
NVMFS5833NWFT1G PDF预览

NVMFS5833NWFT1G

更新时间： 2024-01-05 09:48:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 77K
描述
Single N−Channel Power MOSFET

阅读下载

获取价格

NVMFS5833NWFT1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：,
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.66配置：Single
最大漏极电流 (Abs) (ID)：86 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e3湿度敏感等级：1
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：112 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
Base Number Matches：1

NVMFS5833NWFT1G 数据手册

 浏览型号NVMFS5833NWFT1G的Datasheet PDF文件第2页浏览型号NVMFS5833NWFT1G的Datasheet PDF文件第3页浏览型号NVMFS5833NWFT1G的Datasheet PDF文件第4页浏览型号NVMFS5833NWFT1G的Datasheet PDF文件第5页浏览型号NVMFS5833NWFT1G的Datasheet PDF文件第6页 
NVMFS5833N  
Power MOSFET  
40 V, 7.5 mW, 86 A, Single N−Channel,  
SO−8FL  
Features  
• Low R  
DS(on)  
http://onsemi.com  
• Low Capacitance  
• Optimized Gate Charge  
• AEC−Q101 Qualified and PPAP Capable  
• NVMFS5833NWF − Wettable Franks Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
40 V  
7.5 mW @ 10 V  
86 A  
• These Devices are Pb−Free and are RoHS Compliant  
D (5)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
G (4)  
Gate−to−Source Voltage  
V
"20  
86  
V
GS  
Continuous Drain Cur-  
rent R  
T
= 25°C  
= 100°C  
= 25°C  
I
A
mb  
D
Y
J−mb  
S (1,2,3)  
N−CHANNEL MOSFET  
T
mb  
61  
112  
56  
(Notes 1, 2, 3 & 4)  
Steady  
State  
Power Dissipation  
T
mb  
P
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
MARKING DIAGRAM  
D
Continuous Drain Cur-  
rent R  
T = 25°C  
I
16  
A
D
S
S
S
G
D
D
q
JA  
1
T = 100°C  
A
11  
(Notes 1, 3 & 4)  
Steady  
State  
5833xx  
AYWZZ  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Power Dissipation  
T = 25°C  
P
3.7  
1.8  
324  
W
A
D
R
(Notes 1 & 3)  
q
JA  
T = 100°C  
A
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
5833  
xx  
= Specific Device Code  
= N (NVMFS5833N) or  
= WF (NVMFS5833NWF)  
= Assembly Location  
= Year  
Operating Junction and Storage Temperature  
T , T  
J
−55 to  
175  
°C  
stg  
A
Y
W
ZZ  
Source Current (Body Diode)  
I
86  
65  
A
S
Single Pulse Drain−to−Source Avalanche  
E
mJ  
= Work Week  
= Lot Traceability  
AS  
Energy (T = 25°C, I  
= 36 A, L = 0.1 mH)  
J
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
†
Device  
Package  
Shipping  
NVMFS5833NT1G  
SO−8FL  
1500 /  
(Pb−Free) Tape & Reel  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
NVMFS5833NT3G  
SO−8FL 5000 /  
(Pb−Free) Tape & Reel  
SO−8FL 1500 /  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
1.3  
°C/W  
Y
J−mb  
NVMFS5833NWFT1G  
NVMFS5833NWFT3G  
(Pb−Free) Tape & Reel  
Junction−to−Ambient − Steady State (Note 3)  
R
41  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
SO−8FL 5000 /  
(Pb−Free) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as  
1 second are higher but are dependent on pulse duration and duty cycle/  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
September, 2014 − Rev. 1  
NVMFS5833N/D  
 
123456

下载PDF

与NVMFS5833NWFT1G相关器件

型号 品牌 描述 获取价格 数据表
NVMFS5833NWFT3G ONSEMI Single N−Channel Power MOSFET

获取价格
NVMFS5834NL ONSEMI Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel

获取价格
NVMFS5834NLT1G ONSEMI 40 V, 75 A, 9.3 m, Single N−Channel

获取价格
NVMFS5834NLT3G ONSEMI Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel

获取价格
NVMFS5834NLWFT1G ONSEMI 功率 MOSFET，40V，75A，9.3mΩ，单 N 沟道，SO8-FL，逻辑电平

获取价格
NVMFS5834NLWFT3G ONSEMI 功率 MOSFET，40V，75A，9.3mΩ，单 N 沟道，SO8-FL，逻辑电平

获取价格

与NVMFS5833NWFT1G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证