Datasheet > NVMFS5834NL

NVMFS5834NL

更新时间： 2024-11-16 12:26:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	114K
描述
Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel

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中文翻译

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NVMFS5834NL 数据手册

NTMFS5834NL,

NVMFS5834NL

Power MOSFET

40 V, 75 A, 9.3 mW, Single N−Channel

Features

• Low R

DS(on)

http://onsemi.com

• Low Capacitance

• Optimized Gate Charge

• NVMFS Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

MAX

I MAX

(BR)DSS

DS(ON)

9.3 mW @ 10 V

40 V

75 A

13.6 mW @ 4.5 V

• These Devices are Pb−Free and are RoHS Compliant

D (5,6)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

G (4)

Continuous Drain

Current R

T = 25°C

T = 100°C

S (1,2,3)

N−CHANNEL MOSFET

(Note 1)

Power Dissipation

T = 25°C

3.6

2.5

(Note 1)

T = 100°C

Steady

State

MARKING

DIAGRAM

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Note 1)

Power Dissipation

107

5834L

AYWZZ

(Note 1)

DFN5

= 100°C

(SO−8FL)

CASE 488AA

STYLE 1

Pulsed Drain

Current

t = 10 ms

276

Operating Junction and Storage

Temperature

T , T

−55 to

+175

°C

STG

= Assembly Location

= Year

= Work Week

= Lot Traceability

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (L = 0.1 mH)

EAS

IAS

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

NTMFS5834NLT1G

NVMFS5834NLT1G

NVMFS5834NLT3G

DFN5

(Pb−Free)

1500/Tape & Reel

5000/Tape & Reel

THERMAL RESISTANCE MAXIMUM RATINGS

DFN5

(Pb−Free)

Parameter

Symbol

Value

1.4

Unit

Junction−to−Case (Bottom) (Note 1)

Junction−to−Case (Top) (Note 1)

DFN5

(Pb−Free)

4.5

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Junction−to−Ambient Steady State

°C/W

(Note 1)

Junction−to−Ambient Steady State

(Note 2)

Publication Order Number:

February, 2013 − Rev. 3

NTMFS5834NL/D

12 3 4 5 6

中文翻译

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与NVMFS5834NL相关器件

型号	品牌	获取价格	描述	数据表
NVMFS5834NLT1G	ONSEMI	获取价格	40 V, 75 A, 9.3 m, Single NâChannel
NVMFS5834NLT3G	ONSEMI	获取价格	Power MOSFET 40 V, 75 A, 9.3 m, Single N.Channel
NVMFS5834NLWFT1G	ONSEMI	获取价格	功率 MOSFET，40V，75A，9.3mΩ，单 N 沟道，SO8-FL，逻辑电平
NVMFS5834NLWFT3G	ONSEMI	获取价格	功率 MOSFET，40V，75A，9.3mΩ，单 N 沟道，SO8-FL，逻辑电平
NVMFS5844NL	ONSEMI	获取价格	Power MOSFET 60 V, 61 A, 12 m, Single N.Channel
NVMFS5844NLT1G	ONSEMI	获取价格	Power MOSFET 60 V, 61 A, 12 m, Single N.Channel
NVMFS5844NLT3G	ONSEMI	获取价格	Power MOSFET 60 V, 61 A, 12 m, Single N.Channel
NVMFS5844NLWFT1G	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，逻辑电平，60 V，61 A，12 mΩ
NVMFS5844NLWFT3G	ONSEMI	获取价格	功率 MOSFET，单 N 沟道，逻辑电平，60 V，61 A，12 mΩ
NVMFS5885NL	ONSEMI	获取价格	Single NâChannel Power MOSFET

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