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NVMFS4C310NWFT3G

更新时间： 2024-09-30 11:11:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 288K
描述
Power MOSFET30 V, 51 A, Single N−Channel, SO−8 FL

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NVMFS4C310NWFT3G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, DFN5/DFNW5  
30 V, 6.0 mW, 51 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
6.0 mW @ 10 V  
9.0 mW @ 4.5 V  
30 V  
51 A  
D (5−8)  
NVMFS4C310N  
Features  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
G (4)  
• Optimized Gate Charge to Minimize Switching Losses  
S (1,2,3)  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical  
Inspection  
MARKING  
DIAGRAM  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
DFN5  
D
CASE 488AA  
S
S
S
G
D
D
1
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
XXXXXX  
AYWZZ  
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
DFNW5  
CASE 507BA  
V
DSS  
D
V
GS  
20  
V
4C10N = Specific Device Code for  
NVMFS4C310N  
4C10WF= Specific Device Code of  
NVMFS4C310NWF  
Continuous Drain  
Current R  
T = 25°C  
17  
A
A
I
D
q
JA  
T = 100°C  
A
12  
(Notes 1, 2 and 4)  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
Power Dissipation  
T = 25°C  
3.5  
W
A
R
(Notes 1, 2  
P
q
JA  
D
and 4)  
Steady  
State  
Continuous Drain  
Current R  
T
C
= 25°C  
51  
36  
q
JC  
I
D
A
(Notes 1, 2, 3  
and 4)  
T
C
= 100°C  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Power Dissipation  
T
C
= 25°C  
P
D
32  
W
R
(Notes 1, 2, 3  
q
JC  
NVMFS4C310NT1G  
DFN5  
1500 /  
and 4)  
(Pb−Free) Tape & Reel  
Pulsed Drain  
Current  
T = 25°C, t = 10 ms  
I
DM  
132  
A
A
p
NVMFS4C310NWFT1G DFNW5 1500 /  
(Pb−Free) Tape & Reel  
Operating Junction and Storage  
Temperature  
T ,  
STG  
−55 to  
°C  
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
T
+175  
Source Current (Body Diode)  
I
S
21  
31  
A
Single Pulse Drain−to−Source Avalanche  
Energy (I = 25 A ) (Note 3)  
E
AS  
mJ  
L
pk  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.  
3. Assumes heat−sink sufficiently large to maintain constant case temperature  
independent of device power.  
4. Continuous DC current rating. Maximum current for pulses as long as one  
second is higher but dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
April, 2023 − Rev. 1  
NVMFS4C310N/D  
 
12345678

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