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NVMFS5826NLWFT1G

更新时间： 2024-11-16 12:33:47
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安森美 - ONSEMI /
页数 文件大小 规格书
6页 116K
描述
Power MOSFET 60 V, 24 m, 26 A, Single N−Channel

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NVMFS5826NLWFT1G 数据手册

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NVMFS5826NL  
Power MOSFET  
60 V, 24 mW, 26 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
G
• NVMFS5826NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
• These are Pb−Free Devices and RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
24 mW @ 10 V  
32 mW @ 4.5 V  
60 V  
26 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
D (5,6)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain Cur-  
T
= 25°C  
I
26  
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
= 100°C  
19  
2, 3, 4)  
Steady  
State  
G (4)  
Power Dissipation  
T
mb  
= 25°C  
P
39  
19  
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain Cur-  
T = 25°C  
I
D
8.0  
A
rent R  
4)  
(Notes 1, 3,  
q
JA  
T = 100°C  
A
6.0  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Notes 1 & 3)  
T = 25°C  
P
3.6  
1.8  
130  
W
A
D
R
q
JA  
T = 100°C  
A
D
1
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
S
S
S
G
D
D
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
XXXXXX  
AYWZZ  
+ 175  
Source Current (Body Diode)  
I
S
32  
20  
A
D
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 24 V, V = 10 V,  
J
DD  
GS  
A
Y
= Assembly Location  
= Year  
I
= 20 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
3.9  
°C/W  
Y
J−mb  
Junction−to−Ambient − Steady State (Note 3)  
R
42  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 3  
NVMFS5826NL/D  
 
123456

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NVMFS5826NLWFT1G 替代型号

型号 品牌 替代类型 描述 数据表
NVMFS5826NLWFT3G ONSEMI

完全替代

 Power MOSFET 60 V, 24 m, 26 A, Single N−Ch

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