5秒后页面跳转
捷配首页

Datasheet > NVMFS5830NLT3G
NVMFS5830NLT3G PDF预览

NVMFS5830NLT3G

更新时间： 2024-11-16 12:01:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 111K
描述
Power MOSFET 40 V, 2.3 m, 185 A, Single N.Channel

阅读下载

中文翻译

获取价格

NVMFS5830NLT3G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.14
雪崩能效等级（Eas）：361 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：185 A最大漏源导通电阻：0.0036 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：158 W
最大脉冲漏极电流 (IDM)：1012 A参考标准：AEC-Q101
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

NVMFS5830NLT3G 数据手册

 浏览型号NVMFS5830NLT3G的Datasheet PDF文件第2页浏览型号NVMFS5830NLT3G的Datasheet PDF文件第3页浏览型号NVMFS5830NLT3G的Datasheet PDF文件第4页浏览型号NVMFS5830NLT3G的Datasheet PDF文件第5页浏览型号NVMFS5830NLT3G的Datasheet PDF文件第6页 
NVMFS5830NL  
Power MOSFET  
40 V, 2.3 mW, 185 A, Single N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
G
• AEC−Q101 Qualified and PPAP Capable  
• These are Pb−Free Devices*  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
2.3 mW @ 10 V  
3.6 mW @ 4.5 V  
40 V  
185 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
D (5,6)  
Continuous Drain Cur-  
T
= 25°C  
I
185  
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
= 100°C  
131  
2, 3, 4)  
Steady  
State  
Power Dissipation  
T
mb  
= 25°C  
P
158  
79  
W
A
D
G (4)  
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
Continuous Drain Cur-  
T = 25°C  
I
D
29  
A
S (1,2,3)  
N−CHANNEL MOSFET  
rent R  
4)  
(Notes 1, 3,  
q
JA  
T = 100°C  
A
20  
Steady  
State  
Power Dissipation  
(Notes 1 & 3)  
T = 25°C  
P
3.8  
1.9  
W
A
D
R
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
1012  
A
A
p
D
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
S
S
S
G
D
D
1
V5830L  
AYWZZ  
Source Current (Body Diode)  
I
S
185  
361  
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
D
Energy (T = 25°C, V = 10 V, I = 85 A, L  
J
GS  
L(pk)  
= 0.1 mH, R = 25 W)  
G
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
THERMAL RESISTANCE MAXIMUM RATINGS  
†
Parameter  
Symbol  
Value  
Unit  
Device  
Package  
Shipping  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
1.0  
°C/W  
Y
J−mb  
NVMFS5830NLT1G  
SO−8FL  
(Pb−Free)  
1500 /  
Tape & Reel  
Junction−to−Ambient − Steady State (Note 3)  
R
39  
q
JA  
NVMFS5830NLT3G  
SO−8FL  
5000 /  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
(Pb−Free)  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the ON  
Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
March, 2013 − Rev. 1  
NVMFS5830NL/D  
 
123456

中文翻译

下载PDF

与NVMFS5830NLT3G相关器件

型号 品牌 获取价格 描述 数据表
NVMFS5830NLWFT1G ONSEMI

获取价格

 		Power MOSFET 40V, 185A, 2.3 mOhm, Single N-Channel, SO8-FL, Logic Level.
NVMFS5830NLWFT3G ONSEMI

获取价格

 		Power MOSFET 40V, 185A, 2.3 mOhm, Single N-Channel, SO8-FL, Logic Level.
NVMFS5831NLWFT1G ONSEMI

获取价格

 		Power MOSFET 40V, 161 A, 2.95 mΩ, Single N-Ch
NVMFS5832NL ONSEMI

获取价格

 		Power MOSFET 40 V, 4.2 m, 120 A, Single N.Channel
NVMFS5832NLT1G ONSEMI

获取价格

 		40 V, 4.2 m, 120 A, Single N−Channel
NVMFS5832NLT3G ONSEMI

获取价格

 		40 V, 4.2 m, 120 A, Single N−Channel
NVMFS5832NLWFT1G ONSEMI

获取价格

 		功率 MOSFET，40V，120A，4.2mΩ，单 N 沟道，SO8-FL，逻辑电平
NVMFS5832NLWFT3G ONSEMI

获取价格

 		功率 MOSFET，40V，120A，4.2mΩ，单 N 沟道，SO8-FL，逻辑电平
NVMFS5833N ONSEMI

获取价格

 		Single N−Channel Power MOSFET
NVMFS5833NT1G ONSEMI

获取价格

 		Single N−Channel Power MOSFET

与NVMFS5830NLT3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证