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NVMFS5113PLWFT1G

更新时间： 2024-11-17 14:53:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 226K
描述
Power MOSFET ?60V, 64A, 14 mOhm, Single P-Channel, SO8-FL, Logic Level.

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NVMFS5113PLWFT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
Factory Lead Time：9 weeks风险等级：5.66
雪崩能效等级（Eas）：315 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏源导通电阻：0.014 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F5JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：P-CHANNEL
最大脉冲漏极电流 (IDM)：415 A参考标准：AEC-Q101
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
晶体管元件材料：SILICONBase Number Matches：1

NVMFS5113PLWFT1G 数据手册

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NVMFS5113PL  
MOSFET – Power, Single  
P-Channel  
-60 V, 14 mW, -64 A  
Features  
• Low R  
to Minimize Conduction Losses  
• High Current Capability  
DS(on)  
www.onsemi.com  
• Avalanche Energy Specified  
V
R
I
D
• NVMFS5113PLWF − Wettable Flanks Product  
• NVM Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
(BR)DSS  
DS(on)  
14 mW @ −10 V  
22 mW @ −4.5 V  
−60 V  
−64 A  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
S (1, 2, 3)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G (4)  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
−60  
"20  
−64  
−45  
150  
75  
Unit  
V
P−Channel  
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
D (5, 6)  
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
I
A
C
D
rent R  
(Notes 1, 2, 3)  
q
JC  
T
C
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation R  
(Notes 1, 2)  
T
C
P
W
A
q
D
JC  
T
C
= 100°C  
D
Continuous Drain Cur-  
rent R (Notes 1, 2, 3)  
T = 25°C  
I
−10  
−7  
A
D
S
S
S
G
D
D
1
q
JA  
XXXXXX  
AYWZZ  
T = 100°C  
A
Steady  
State  
DFN5  
CASE 488AA  
STYLE 1  
Power Dissipation R  
(Notes 1, 2)  
T = 25°C  
A
P
3.8  
W
q
D
JA  
T = 100°C  
A
1.9  
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
−415  
A
A
p
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
−150  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
315  
mJ  
Energy (T = 25°C, V = 50 V, V = 10 V,  
J
DD  
GS  
ORDERING INFORMATION  
I
= 46 A, L = 0.3 mH, R = 25 W)  
L(pk)  
G
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State (Drain)  
(Note 2)  
R
1.0  
°C/W  
q
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
39  
°C/W  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Continuous DC current rating. Maximum current for pulses as long as  
1 second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
July, 2019 − Rev. 3  
NVMFS5113PL/D  
 
1234567

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