5秒后页面跳转
捷配首页

Datasheet > NVMFS4C310NWFT1G
NVMFS4C310NWFT1G PDF预览

NVMFS4C310NWFT1G

更新时间： 2024-11-17 11:11:15
品牌 Logo 应用领域
安森美 - ONSEMI 脉冲光电二极管晶体管
页数 文件大小 规格书
8页 288K
描述
Power MOSFET30 V, 51 A, Single N−Channel, SO−8 FL

阅读下载

中文翻译

获取价格

NVMFS4C310NWFT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SO-8FL, DFN5, 6 PINReach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：8 weeks
风险等级：5.21雪崩能效等级（Eas）：31 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：51 A
最大漏极电流 (ID)：17 A最大漏源导通电阻：0.009 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：132 A参考标准：AEC-Q101
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

NVMFS4C310NWFT1G 数据手册

 浏览型号NVMFS4C310NWFT1G的Datasheet PDF文件第2页浏览型号NVMFS4C310NWFT1G的Datasheet PDF文件第3页浏览型号NVMFS4C310NWFT1G的Datasheet PDF文件第4页浏览型号NVMFS4C310NWFT1G的Datasheet PDF文件第5页浏览型号NVMFS4C310NWFT1G的Datasheet PDF文件第6页浏览型号NVMFS4C310NWFT1G的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, DFN5/DFNW5  
30 V, 6.0 mW, 51 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
6.0 mW @ 10 V  
9.0 mW @ 4.5 V  
30 V  
51 A  
D (5−8)  
NVMFS4C310N  
Features  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
G (4)  
• Optimized Gate Charge to Minimize Switching Losses  
S (1,2,3)  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical  
Inspection  
MARKING  
DIAGRAM  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
DFN5  
D
CASE 488AA  
S
S
S
G
D
D
1
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
XXXXXX  
AYWZZ  
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
DFNW5  
CASE 507BA  
V
DSS  
D
V
GS  
20  
V
4C10N = Specific Device Code for  
NVMFS4C310N  
4C10WF= Specific Device Code of  
NVMFS4C310NWF  
Continuous Drain  
Current R  
T = 25°C  
17  
A
A
I
D
q
JA  
T = 100°C  
A
12  
(Notes 1, 2 and 4)  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
Power Dissipation  
T = 25°C  
3.5  
W
A
R
(Notes 1, 2  
P
q
JA  
D
and 4)  
Steady  
State  
Continuous Drain  
Current R  
T
C
= 25°C  
51  
36  
q
JC  
I
D
A
(Notes 1, 2, 3  
and 4)  
T
C
= 100°C  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Power Dissipation  
T
C
= 25°C  
P
D
32  
W
R
(Notes 1, 2, 3  
q
JC  
NVMFS4C310NT1G  
DFN5  
1500 /  
and 4)  
(Pb−Free) Tape & Reel  
Pulsed Drain  
Current  
T = 25°C, t = 10 ms  
I
DM  
132  
A
A
p
NVMFS4C310NWFT1G DFNW5 1500 /  
(Pb−Free) Tape & Reel  
Operating Junction and Storage  
Temperature  
T ,  
STG  
−55 to  
°C  
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
T
+175  
Source Current (Body Diode)  
I
S
21  
31  
A
Single Pulse Drain−to−Source Avalanche  
Energy (I = 25 A ) (Note 3)  
E
AS  
mJ  
L
pk  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.  
3. Assumes heat−sink sufficiently large to maintain constant case temperature  
independent of device power.  
4. Continuous DC current rating. Maximum current for pulses as long as one  
second is higher but dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
April, 2023 − Rev. 1  
NVMFS4C310N/D  
 
12345678

中文翻译

下载PDF

与NVMFS4C310NWFT1G相关器件

型号 品牌 获取价格 描述 数据表
NVMFS4C310NWFT3G ONSEMI

获取价格

 		Power MOSFET30 V, 51 A, Single N−Channel, SO−
NVMFS5113PLT1G ONSEMI

获取价格

 		Power MOSFET ?60V, 64A, 14 mOhm, Single P-Channel, SO8-FL, Logic Level.
NVMFS5113PLWFT1G ONSEMI

获取价格

 		Power MOSFET ?60V, 64A, 14 mOhm, Single P-Channel, SO8-FL, Logic Level.
NVMFS5826NL ONSEMI

获取价格

 		Power MOSFET 60 V, 24 m, 26 A, Single N−Ch
NVMFS5826NLT1G ONSEMI

获取价格

 		Power MOSFET 60 V, 24 m, 26 A, Single N−Ch
NVMFS5826NLT3G ONSEMI

获取价格

 		Power MOSFET 60 V, 24 m, 26 A, Single N−Ch
NVMFS5826NLWFT1G ONSEMI

获取价格

 		Power MOSFET 60 V, 24 m, 26 A, Single N−Ch
NVMFS5826NLWFT3G ONSEMI

获取价格

 		Power MOSFET 60 V, 24 m, 26 A, Single N−Ch
NVMFS5830NL ONSEMI

获取价格

 		40 V, 2.3 m, 185 A, Single N−Channel
NVMFS5830NL_13 ONSEMI

获取价格

 		Power MOSFET 40 V, 2.3 m, 185 A, Single N.Channel

与NVMFS4C310NWFT1G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证