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NVMFS4C05NT3G

更新时间： 2024-11-17 01:04:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 81K
描述
Power MOSFET

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中文翻译

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NVMFS4C05NT3G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not RecommendedReach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：4 weeks
风险等级：6.97配置：Single
最大漏极电流 (Abs) (ID)：116 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e3湿度敏感等级：1
最高工作温度：175 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：79 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NVMFS4C05NT3G 数据手册

 浏览型号NVMFS4C05NT3G的Datasheet PDF文件第2页浏览型号NVMFS4C05NT3G的Datasheet PDF文件第3页浏览型号NVMFS4C05NT3G的Datasheet PDF文件第4页浏览型号NVMFS4C05NT3G的Datasheet PDF文件第5页浏览型号NVMFS4C05NT3G的Datasheet PDF文件第6页 
NVMFS4C05N  
Power MOSFET  
30 V, 127 A, Single N−Channel, SO−8 FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical  
Inspection  
www.onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• AEC−Q101 Qualified and PPAP Capable  
2.8 mW @ 10 V  
4.0 mW @ 4.5 V  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
30 V  
127 A  
Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
D (5−8)  
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
V
GS  
20  
V
G (4)  
Continuous Drain  
Current R  
T = 25°C  
27.2  
21.6  
3.61  
A
A
I
D
q
JA  
T = 80°C  
A
(Notes 1, 2 and 4)  
S (1,2,3)  
N−CHANNEL MOSFET  
Power Dissipation  
T = 25°C  
A
W
R
(Notes 1, 2  
P
D
q
JA  
and 4)  
MARKING  
DIAGRAM  
Continuous Drain  
Current R  
(Notes 1, 2, 3  
and 4)  
T
= 25°C  
= 80°C  
127  
101  
C
C
q
JC  
Steady  
State  
D
S
S
S
G
D
D
1
I
A
D
4C05xx  
AYWZZ  
Continuous Drain  
Current R  
(Notes 1, 2, 3  
and 4)  
T
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
q
JC  
D
4C05N = Specific Device Code for  
NVMFS4C05N  
Power Dissipation  
T
C
= 25°C  
P
79  
W
D
R
(Notes 1, 2, 3  
q
JC  
4C05WF= Specific Device Code of  
NVMFS4C05NWF  
and 4)  
Pulsed Drain  
Current  
T = 25°C, t = 10 ms  
I
DM  
174  
A
A
p
A
Y
= Assembly Location  
= Year  
W
ZZ  
= Work Week  
= Lot Traceabililty  
Operating Junction and Storage  
Temperature  
T ,  
−55 to  
+175  
°C  
J
T
STG  
Source Current (Body Diode)  
I
72  
42  
A
S
ORDERING INFORMATION  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
†
Energy (T = 25°C, I = 29 A , L = 0.1 mH)  
Device  
Package  
Shipping  
J
L
pk  
NVMFS4C05NT1G  
SO−8 FL  
(Pb−Free) Tape & Reel  
1500 /  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NVMFS4C05NT3G  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
NVMFS4C05NWFT1G  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.  
NVMFS4C05NWFT3G  
3. Assumes heat−sink sufficiently large to maintain constant case temperature  
independent of device power.  
4. Continuous DC current rating. Maximum current for pulses as long as one  
second is higher but dependent on pulse duration and duty cycle.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
April, 2016 − Rev. 2  
NVMFS4C05N/D  
 
123456

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