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NVMFS4C302NWFT1G

更新时间： 2024-09-30 11:12:03
品牌 Logo 应用领域
安森美 - ONSEMI 脉冲光电二极管晶体管
页数 文件大小 规格书
7页 169K
描述
Single N−Channel Logic Level Power MOSFET 30 V, 241 A, 1.15 mΩ

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中文翻译

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NVMFS4C302NWFT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
Factory Lead Time：8 weeks风险等级：2.11
雪崩能效等级（Eas）：186 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (ID)：43 A最大漏源导通电阻：0.0017 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：900 A参考标准：AEC-Q101
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

NVMFS4C302NWFT1G 数据手册

 浏览型号NVMFS4C302NWFT1G的Datasheet PDF文件第2页浏览型号NVMFS4C302NWFT1G的Datasheet PDF文件第3页浏览型号NVMFS4C302NWFT1G的Datasheet PDF文件第4页浏览型号NVMFS4C302NWFT1G的Datasheet PDF文件第5页浏览型号NVMFS4C302NWFT1G的Datasheet PDF文件第6页浏览型号NVMFS4C302NWFT1G的Datasheet PDF文件第7页 
NVMFS4C302N  
Power MOSFET  
30 V, 1.15 mW, 241 A, Single N−Channel  
Logic Level, SO−8FL  
Features  
• Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• NVMFS4C302NWF − Wettable Flanks Option for Enhanced Optical  
Inspection  
1.15 mW @ 10 V  
1.7 mW @ 4.5 V  
30 V  
241 A  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
D (5,6)  
Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
G (4)  
V
DSS  
Gate−to−Source Voltage  
V
"20  
241  
V
GS  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain Cur-  
T
T
= 25°C  
= 25°C  
I
A
C
D
rent R  
3)  
(Notes 1, 2,  
q
JC  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Notes 1, 2)  
P
115  
43  
W
A
C
D
R
q
JC  
D
Continuous Drain Cur-  
T = 25°C  
A
I
D
rent R  
3)  
(Notes 1, 2,  
q
JA  
S
S
S
G
D
D
1
Steady  
State  
4C02xx  
AYWZZ  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 1  
Power Dissipation  
(Notes 1, 2)  
T = 25°C  
A
P
3.75  
900  
W
D
R
q
JA  
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
4C02N = Specific Device Code for  
NVMFS4C302N  
4C02WF= Specific Device Code of  
NVMFS4C302NWF  
Operating Junction and Storage Temperature  
T , T  
J
−55 to  
175  
°C  
stg  
Source Current (Body Diode)  
I
153  
186  
A
S
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
Single Pulse Drain−to−Source Avalanche  
E
mJ  
AS  
Energy (I  
= 61 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
NVMFS4C302NT1G  
SO−8 FL  
(Pb−Free) Tape & Reel  
1500 /  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State (Note 2)  
Junction−to−Ambient − Steady State (Note 2)  
R
1.3  
40  
°C/W  
q
q
JC  
NVMFS4C302NWFT1G  
SO−8 FL  
1500 /  
R
JA  
(Pb−Free) Tape & Reel  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
December, 2017 − Rev. 0  
NVMFS4C302N/D  
 
1234567

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