Datasheet > NVMFS027N10MCLT1G

NVMFS027N10MCLT1G

更新时间： 2024-09-30 11:15:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	146K
描述
Single N-Channel Power MOSFET 100V, 28A, 26mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVMFS027N10MCLT1G 数据手册

浏览型号NVMFS027N10MCLT1G的Datasheet PDF文件第2页

浏览型号NVMFS027N10MCLT1G的Datasheet PDF文件第3页

浏览型号NVMFS027N10MCLT1G的Datasheet PDF文件第4页

浏览型号NVMFS027N10MCLT1G的Datasheet PDF文件第5页

浏览型号NVMFS027N10MCLT1G的Datasheet PDF文件第6页

DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel

100 V, 26 mW, 28 A

MAX

I MAX

(BR)DSS

DS(ON)

26 mW @ 10 V

35 mW @ 4.5 V

100 V

28 A

NVMFS027N10MCL

D (5,6)

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

G (4)

• AEC−Q101 Qualified and PPAP Capable

• NVMFWS027N10MCL − Wettable Flank Products

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

S (1,2,3)

N−CHANNEL MOSFET

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DSS

XXXXXX

AYWZZ

DFN5

CASE 488AA

STYLE 1

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

XXXXXX

AYWZZ

= 100°C

DFNW5

(for WF Version)

CASE 507BA

Continuous Drain

Current R

T = 25°C

7.9

5.6

3.5

1.8

137

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

XXXXXX = Specific Device Code

(Notes 1, 2)

= Assembly Location

= Year

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

= Work Week

= Lot Traceability

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Single Pulse Drain−to−Source Avalanche

414

Energy (I

= 1.3 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

3.3

Unit

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

42.4

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

September, 2021 − Rev. 1

NVMFS027N10MCL/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NVMFS027N10MCLT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS040N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 28A, 26mΩ
NVMFS2D3P04M8LT1G	ONSEMI	获取价格	NVMFS2D3P04M8L Power MOSFET, Single, P-Channe
NVMFS3D0P04M8LT1G	ONSEMI	获取价格	Power MOSFET, Single P-Channel, -40 V, 2.7 mΩ
NVMFS3D6N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100 V, 131 A, 3
NVMFS4841N	ONSEMI	获取价格	Power MOSFET
NVMFS4841NT1G	ONSEMI	获取价格	Power MOSFET 30V, 7 m, 89A, Single N?Channel SO8FL
NVMFS4841NT3G	ONSEMI	获取价格	Power MOSFET 30V, 7 m, 89A, Single N?Channel SO8FL
NVMFS4841NWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS4841NWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS4C	ONSEMI	获取价格	Power MOSFET

与NVMFS027N10MCLT1G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

24
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

22
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

22
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

34

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFS027N10MCLT1G

NVMFS027N10MCLT1G 数据手册

与NVMFS027N10MCLT1G相关器件

与NVMFS027N10MCLT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFS027N10MCLT1G

NVMFS027N10MCLT1G 数据手册

与NVMFS027N10MCLT1G相关器件

与NVMFS027N10MCLT1G相关文章

您还可以找

您在本页遇到什么问题？