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NVMFS4841NWFT1G

更新时间： 2024-09-30 01:12:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 122K
描述
Power MOSFET

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中文翻译

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NVMFS4841NWFT1G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,针数：5
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.16
配置：Single最大漏极电流 (Abs) (ID)：89 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e3
湿度敏感等级：1最高工作温度：175 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：112 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)Base Number Matches：1

NVMFS4841NWFT1G 数据手册

 浏览型号NVMFS4841NWFT1G的Datasheet PDF文件第2页浏览型号NVMFS4841NWFT1G的Datasheet PDF文件第3页浏览型号NVMFS4841NWFT1G的Datasheet PDF文件第4页浏览型号NVMFS4841NWFT1G的Datasheet PDF文件第5页浏览型号NVMFS4841NWFT1G的Datasheet PDF文件第6页 
NVMFS4841N  
Power MOSFET  
30V, 7 mW, 89A, Single N−Channel SO8FL  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
G
• NVMFS4841NWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
7.0 mW @ 10 V  
30 V  
89 A  
11.4 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
D (5,6)  
Gate−to−Source Voltage  
V
"20  
89  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
= 100°C  
63  
2, 3, 4)  
Steady  
State  
G (4)  
Power Dissipation  
T
mb  
= 25°C  
P
112  
56  
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain Cur-  
T = 25°C  
I
16  
A
D
rent R  
3, 4)  
(Notes 1 &  
q
JA  
T = 100°C  
A
11  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
3.7  
1.8  
336  
80  
W
A
D
R
q
JA  
T = 100°C  
A
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
A
A
A
p
DM  
I
DmaxPkg  
1
S
S
S
G
D
D
Current limited by package  
(Note 4)  
T = 25°C  
A
XXXXXX  
AYWZZ  
DFN5  
(SO−8FL)  
CASE 488AA  
STYLE 1  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
51  
A
S
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Single Pulse Drain−to−Source Avalanche  
E
AS  
180  
mJ  
Energy (T = 25°C, V = 24 V, V = 10 V,  
J
DD  
GS  
I
= 19 A, L = 1.0 mH, R = 25 W)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Note 2, 3)  
R
1.3  
°C/W  
Y
J−mb  
Junction−to−Ambient − Steady State (Note 3)  
R
41  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 3  
NVMFS4841N/D  
 
123456

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NVMFS4841NWFT1G 替代型号

型号 品牌 替代类型 描述 数据表
NVMFS4841NT1G ONSEMI

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