Datasheet > NVMFS4C03N

NVMFS4C03N

更新时间： 2024-11-17 01:05:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	80K
描述
Single NâChannel Power MOSFET

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中文翻译

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数据手册

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NVMFS4C03N 数据手册

NVMFS4C03N

Power MOSFET

30 V, 2.1 mW, 143 A, Single N−Channel

Logic Level, SO−8FL

Features

http://onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

MAX

I MAX

(BR)DSS

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

2.1 mW @ 10 V

2.8 mW @ 4.5 V

30 V

• NVMFS4C03NWF − Wettable Flanks Option for Enhanced Optical

Inspection

143 A

• AEC−Q101 Qualified and PPAP Capable

D (5,6)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

G (4)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

S (1,2,3)

N−CHANNEL MOSFET

Gate−to−Source Voltage

Continuous Drain Cur-

"20

143

= 25°C

rent R

(Notes 1, 2,

Steady

State

MARKING

DIAGRAM

Power Dissipation

(Notes 1, 2)

Continuous Drain Cur-

T = 25°C

31.4

4C03xx

AYWZZ

rent R

(Notes 1, 2,

Steady

State

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

Power Dissipation

(Notes 1, 2)

T = 25°C

3.71

900

4C03N = Specific Device Code for

NVMFS4C03N

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

4C03WF= Specific Device Code of

NVMFS4C03NWF

stg

= Assembly Location

= Year

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

549

= Work Week

= Lot Traceabililty

Energy (I

= 11 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†

Device

Package

Shipping

NVMFS4C03NT1G

SO−8 FL

1500 /

(Pb−Free) Tape & Reel

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

NVMFS4C03NT3G

SO−8 FL 5000 /

(Pb−Free) Tape & Reel

SO−8 FL 1500 /

(Pb−Free) Tape & Reel

SO−8 FL 5000 /

(Pb−Free) Tape & Reel

Junction−to−Case − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 2)

1.95

°C/W

NVMFS4C03NWFT1G

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

NVMFS4C03NWFT3G

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2014 − Rev. 1

NVMFS4C03N/D

12 3 4 5 6

中文翻译

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与NVMFS4C03N相关器件

型号	品牌	获取价格	描述	数据表
NVMFS4C03N_16	ONSEMI	获取价格	Power MOSFET
NVMFS4C03NT1G	ONSEMI	获取价格	Power MOSFET
NVMFS4C03NT3G	ONSEMI	获取价格	Power MOSFET
NVMFS4C03NWFT1G	ONSEMI	获取价格	Power MOSFET
NVMFS4C03NWFT3G	ONSEMI	获取价格	Power MOSFET
NVMFS4C05N	ONSEMI	获取价格	Single NâChannel Power MOSFET
NVMFS4C05N_16	ONSEMI	获取价格	Power MOSFET
NVMFS4C05NT1G	ONSEMI	获取价格	Power MOSFET
NVMFS4C05NT3G	ONSEMI	获取价格	Power MOSFET
NVMFS4C05NWFT1G	ONSEMI	获取价格	Power MOSFET

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