Datasheet > NVMFS3D6N10MCLT1G

NVMFS3D6N10MCLT1G

更新时间： 2024-09-30 11:14:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	403K
描述
Single N-Channel Power MOSFET 100 V, 131 A, 3.6mΩ

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DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel

MAX

I MAX

(BR)DSS

DS(ON)

3.6 mW @ 10 V

5.8 mW @ 4.5 V

100 V

132 A

100 V, 3.6 mW, 132 A

NVMFS3D6N10MCL

D (5,6)

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1,2,3)

• NVMFWS3D6N10MCL − Wettable Flank Option for Enhanced

Optical Inspection

N−CHANNEL MOSFET

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DFN5 5x6, 1.27P (SO−8FL)

DSS

CASE 488AA

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

132

Steady

State

= 100°C

(Notes 1, 3)

Power Dissipation

= 25°C

139

Steady

State

(Note 1)

= 100°C

DFNW5 5x6 (FULL−CUT SO8FL WF)

Continuous Drain

Current R

T = 25°C

Steady

State

CASE 507BA

T = 100°C

(Notes 1, 2, 3)

Power Dissipation

T = 25°C

3.2

1.3

888

Steady

State

(Notes 1, 2)

T = 100°C

MARKING DIAGRAM

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

XXXXXX

AYWZZ

Source Current (Body Diode)

116

739

Single Pulse Drain−to−Source Avalanche

Energy (I = 9.2 A)

XXXXXX = Specific Device Code

Lead Temperature for Soldering Purposes

260

°C

= Assembly Location

= Year

(1/8″ from case for 10 s)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Work Week

= Lot Traceability

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.9

Unit

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

April, 2022 − Rev. 4

NVMFS3D6N10MCL/D

12 3 4 5 6 7 8

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