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NVMFS025P04M8LT1G

更新时间： 2024-11-17 11:11:35
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安森美 - ONSEMI /
页数 文件大小 规格书
7页 207K
描述
Power MOSFET, Single P-Channel, -40 V, 23 mΩ, -34.6 A

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NVMFS025P04M8LT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
P-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
23 mW @ −10 V  
37 mW @ −4.5 V  
-40 V, 23 mW, -34.6 A  
−40 V  
−34.6 A  
NVMFS025P04M8L  
P−Channel MOSFET  
D (5−8)  
Features  
• NVMFWS025P04M8L − Wettable Flanks Product  
• Small Footprint for Compact Design 5 x 6 mm  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• AEC−Q101 Qualified and PPAP Capable  
G (4)  
• These Devices are Pb−Free and are RoHS Compliant  
S (1,2,3)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
−40  
Unit  
V
MARKING  
DIAGRAM  
V
DSS  
D
Gate−to−Source Voltage  
V
20  
V
GS  
1
S
S
S
G
D
D
Continuous Drain  
Current R  
T
= 25°C  
I
−34.6  
A
C
D
DFN5  
XXXXXX  
AYWZZ  
q
JC  
T
C
= 100°C  
−24.5  
(SO−8FL) 5 x 6  
CASE 488AA  
STYLE 1  
(Notes 1, 2, 3, 4)  
Steady  
State  
Power Dissipation  
T
C
= 25°C  
P
44.1  
22.1  
−9.4  
W
A
D
D
R
(Notes 1, 2, 3)  
q
JC  
T
C
= 100°C  
XXXXXX = Specific Device Code  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
A
Y
= Assembly Location  
= Year  
q
JA  
T = 100°C  
A
−6.6  
(Notes 1, 3, 4)  
Steady  
State  
W
ZZ  
= Work Week  
= Lot Traceability  
Power Dissipation  
T = 25°C  
A
P
3.5  
1.8  
204  
W
D
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Operating Junction and Storage Temperature  
Range  
T , T  
J
−55 to  
+175  
°C  
stg  
Source Current (Body Diode)  
I
36.8  
152  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I  
= TBD A)  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
3.4  
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
R
42.4  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially  
less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
June, 2022 − Rev. 2  
NVMFS025P04M8L/D  
 
1234567

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