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NVMFD6H852NLT1G

更新时间： 2024-09-30 11:12:11
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安森美 - ONSEMI /
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7页 218K
描述
Dual N-Channel Power MOSFET 80 V, 25 A, 25.5 mΩ

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NVMFD6H852NLT1G 数据手册

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NVMFD6H852NL  
Power MOSFET  
80 V, 25.5 mW, 25 A, Dual N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
www.onsemi.com  
G
• NVMFD6H852NLWF − Wettable Flank Option for Enhanced  
Optical Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
25.5 mꢂ @ 10 V  
31.5 mꢂ @ 4.5 V  
80 V  
25 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
20  
25  
18  
38  
19  
7
Unit  
V
Dual N−Channel  
V
DSS  
D1  
D2  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
D
A
C
ꢀ
JC  
T
C
(Notes 1, 2, 3)  
Steady  
State  
G1  
G2  
Power Dissipation  
T
C
P
D
W
A
R
(Notes 1, 2)  
ꢀ
JC  
T
C
= 100°C  
= 25°C  
S1  
S2  
Continuous Drain  
Current R  
T
A
I
D
ꢀ
JA  
T
A
= 100°C  
= 25°C  
5
(Notes 1, 2, 3)  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
T
A
P
D
3.2  
1.6  
98  
W
R
(Notes 1, 2)  
ꢀ
JA  
T
A
= 100°C  
D1 D1  
S1  
G1  
S2  
G2  
D1  
Pulsed Drain Current  
T
A
= 25°C, t = 10 ꢁ s  
I
A
p
DM  
1
D1  
D2  
D2  
XXXXXX  
AYWZZ  
DFN8 5x6  
(SO8FL)  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
CASE 506BT  
Source Current (Body Diode)  
I
S
32  
86  
A
D2 D2  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
A
Y
= Assembly Location  
= Year  
Energy (T = 25°C, I  
= 1.3 A)  
J
L(pk)  
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
3.95  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
ꢀ
JC  
R
47.3  
ꢀ
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
April, 2019 − Rev. 0  
NVMFD6H852NL/D  
 
1234567

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