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NVMFS015N10MCLT1G

更新时间： 2024-11-17 11:11:31
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安森美 - ONSEMI /
页数 文件大小 规格书
7页 227K
描述
Single N-Channel Power MOSFET 100V, 54A, 12.2mΩ

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NVMFS015N10MCLT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel  
100 V, 12.2 mW, 47.1 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
12.2 mW @ 10 V  
18.3 mW @ 4.5 V  
100 V  
47.1 A  
NVMFS015N10MCL  
D (5,6)  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
G (4)  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• NVMFWS015N10MCL − Wettable Flank Option for Enhanced  
Optical Inspection  
S (1,2,3)  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
DFN5  
CASE 506EZ  
D
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
20  
Unit  
V
S
S
S
G
D
D
1
XXXXXX  
AYWZZ  
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
DFNW5  
CASE 507BA  
D
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
47.1  
29.8  
59.5  
23.8  
10.7  
6.8  
A
C
D
Steady  
State  
q
JC  
T
C
(Notes 1, 3)  
XXXXXX = Specific Device Code  
A
Y
W
ZZ  
= Assembly Location  
= Year  
Power Dissipation  
T
C
P
W
A
D
D
Steady  
State  
R
(Note 1)  
q
JC  
T
C
= 100°C  
= Work Week  
= Lot Traceability  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
Steady  
State  
q
JA  
T = 100°C  
A
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
A
P
3.1  
W
Steady  
State  
R
(Notes 1, 2)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
q
JA  
T = 100°C  
A
1.2  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
259  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
IS  
49.6  
469  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 2.6 A)  
AS  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
2.1  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
40.8  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
August, 2022 − Rev. 3  
NVMFS015N10MCL/D  
 
1234567

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