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NVMFS020N06CT1G PDF预览

NVMFS020N06CT1G

更新时间: 2024-11-17 11:12:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 384K
描述
Power, Single, N-Channel, SO-8FL, 60 V, 19.6 mΩ, 28 A

NVMFS020N06CT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET- Power, Single  
N-Channel, SO-8FL  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
60 V  
19.6 mW @ 10 V  
28 A  
60 V, 19.6 mW, 28 A  
D (58)  
NVMFS020N06C  
Features  
G (4)  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
S (1,2,3)  
G
NCHANNEL MOSFET  
NVMFWS020N06C Wettable Flank Option for Enhanced Optical  
Inspection  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
1
Applications  
DFN5 5x6, 1.27P (SO8FL)  
CASE 488AA  
Power Tools, Battery Operated Vacuums  
UAV/Drones, Material Handling  
BMS/Storage, Home Automation  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
Unit  
V
DSS  
60  
20  
28  
V
V
A
DFNW5 5x6 (FULLCUT SO8FL WF)  
CASE 507BA  
GatetoSource Voltage  
V
GS  
Continuous Drain  
T
= 25°C  
I
D
C
Steady  
State  
Current R  
q
JC  
T
C
= 100°C  
19  
(Notes 1, 3)  
MARKING DIAGRAM  
Power Dissipation  
T
C
= 25°C  
P
D
31  
15  
9
W
A
Steady  
State  
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
S
S
S
G
D
D
Continuous Drain  
Current R  
T = 25°C  
A
I
D
XXXXXX  
AYWZZ  
Steady  
State  
q
JA  
T = 100°C  
A
6
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
A
P
D
3.4  
1.7  
181  
W
Steady  
State  
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
A
Y
= Assembly Location  
= Year  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature T , T  
Range  
55 to  
+175  
°C  
J
STG  
W
ZZ  
= Work Week  
= Lot Traceabililty  
Source Current (Body Diode)  
I
25  
15  
A
S
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (I = 5.6 A  
)
L
pk  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Lead Temperature Soldering Reflow for  
Soldering Purposes (1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
May, 2022 Rev. 1  
NVMFS020N06C/D  
 

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