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NVMFS021N10MCLT1G

更新时间： 2024-11-17 11:15:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 379K
描述
Single N-Channel Power MOSFET 100 V, 31 A, 23 mΩ

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NVMFS021N10MCLT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Power, Single  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
23 mW @ 10 V  
33 mW @ 4.5 V  
100 V  
31 A  
100 V, 23 mW, 31 A  
NVMFS021N10MCL  
D (5,6)  
Features  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G (4)  
G
• NVMFWS021N10MCL − Wettable Flank Option for Enhanced  
Optical Inspection  
S (1,2,3)  
N−CHANNEL MOSFET  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
100  
20  
Unit  
V
S
S
S
G
D
D
V
DSS  
XXXXXX  
AYWZZ  
1
Gate−to−Source Voltage  
V
GS  
V
DFN5  
CASE 488AA  
STYLE 1  
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
I
D
31  
A
C
D
q
JC  
T
C
= 100°C  
22  
(Notes 1, 3)  
Power Dissipation  
T
= 25°C  
P
49  
24  
W
A
C
D
R
(Note 1)  
D
q
JC  
T
C
= 100°C  
S
S
S
G
D
D
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
I
8.4  
D
XXXXXX  
AYWZZ  
q
JA  
T = 100°C  
A
5.9  
(Notes 1, 2, 3)  
D
DFNW5  
(For WF Version)  
CASE 507BA  
Power Dissipation  
T = 25°C  
P
3.6  
1.8  
159  
W
A
D
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
XXXXXX = Specific Device Code  
A
p
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
+175  
Source Current (Body Diode  
I
S
37  
A
Single Pulse Drain−to−Source Avalanche  
E
AS  
179  
mJ  
Energy (I  
= 1.4 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
T
260  
°C  
L
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
(1/8″ from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
3.1  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
42  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
December, 2021 − Rev. 0  
NVMFS021N10MCL/D  
 
12345678

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