Datasheet > NVMFS016N10MCLT1G

NVMFS016N10MCLT1G

更新时间： 2024-11-17 11:12:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	147K
描述
MOSFET - Power, Single, N-Channel 100 V, 14 mΩ, 46A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVMFS016N10MCLT1G 数据手册

浏览型号NVMFS016N10MCLT1G的Datasheet PDF文件第2页

浏览型号NVMFS016N10MCLT1G的Datasheet PDF文件第3页

浏览型号NVMFS016N10MCLT1G的Datasheet PDF文件第4页

浏览型号NVMFS016N10MCLT1G的Datasheet PDF文件第5页

浏览型号NVMFS016N10MCLT1G的Datasheet PDF文件第6页

DATA SHEET

www.onsemi.com

MOSFET – Power, Single

N-Channel

100 V, 14 mW, 46 A

MAX

I MAX

(BR)DSS

DS(ON)

14 mW @ 10 V

20 mW @ 4.5 V

100 V

46 A

NVMFS016N10MCL

D (5,6)

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

G (4)

• AEC−Q101 Qualified and PPAP Capable

• NVMFWS016N10MCL − Wettable Flank Products

• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free

and are RoHS Compliant

S (1,2,3)

N−CHANNEL MOSFET

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DSS

Gate−to−Source Voltage

XXXXXX

AYWZZ

DFN5

CASE 488AA

STYLE 1

Continuous Drain

= 25°C

= 100°C

= 25°C

Current R

(Note 1)

Steady

State

Power Dissipation

(Note 1)

= 100°C

XXXXXX

AYWZZ

Continuous Drain

Current R

T = 25°C

10.9

7.7

3.6

1.8

243

DFNW5

(for WF Version)

CASE 507BA

T = 100°C

(Notes 1, 2)

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 2)

XXXXXX = Specific Device Code

T = 100°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Single Pulse Drain−to−Source Avalanche

358

Energy (I

= 2.2 A)

L(pk)

Lead Temperature Soldering Reflow for Solder-

ing Purposes (1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

2.35

Unit

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.

Publication Order Number:

September, 2021 − Rev. 1

NVMFS016N10MCL/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NVMFS016N10MCLT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFS020N06CT1G	ONSEMI	获取价格	Power, Single, N-Channel, SO-8FL, 60 V, 19.6
NVMFS021N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100 V, 31 A, 23
NVMFS024N06CT1G	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel
NVMFS025P04M8LT1G	ONSEMI	获取价格	Power MOSFET, Single P-Channel, -40 V, 23 mΩ,
NVMFS027N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 28A, 26mΩ
NVMFS040N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 28A, 26mΩ
NVMFS2D3P04M8LT1G	ONSEMI	获取价格	NVMFS2D3P04M8L Power MOSFET, Single, P-Channe
NVMFS3D0P04M8LT1G	ONSEMI	获取价格	Power MOSFET, Single P-Channel, -40 V, 2.7 mΩ
NVMFS3D6N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100 V, 131 A, 3
NVMFS4841N	ONSEMI	获取价格	Power MOSFET

与NVMFS016N10MCLT1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

14
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

36
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFS016N10MCLT1G

NVMFS016N10MCLT1G 数据手册

与NVMFS016N10MCLT1G相关器件

与NVMFS016N10MCLT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFS016N10MCLT1G

NVMFS016N10MCLT1G 数据手册

与NVMFS016N10MCLT1G相关器件

与NVMFS016N10MCLT1G相关文章

您还可以找

您在本页遇到什么问题？