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NVMFS016N06CT1G

更新时间： 2024-09-30 11:14:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 384K
描述
Single N-Channel Power MOSFET 60V, 33A, 15.6 mΩ

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NVMFS016N06CT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET- Power, Single  
N-Channel, SO-8FL  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
60 V  
15.6 mW @ 10 V  
33 A  
60 V, 15.6 mW, 33 A  
D (5−8)  
NVMFS016N06C  
Features  
G (4)  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
S (1,2,3)  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
N−CHANNEL MOSFET  
• NVMFWS016N06C − Wettable Flank Option for Enhanced Optical  
Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
Applications  
DFN5 5x6, 1.27P (SO−8FL)  
CASE 488AA  
• Power Tools, Battery Operated Vacuums  
• UAV/Drones, Material Handling  
• BMS/Storage, Home Automation  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
DFNW5 5x6 (FULL−CUT SO8FL WF)  
CASE 507BA  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
T
= 25°C  
I
D
33  
A
C
Steady  
State  
Current R  
q
JC  
T
C
= 100°C  
23  
(Notes 1, 3)  
MARKING DIAGRAM  
Power Dissipation  
T
= 25°C  
P
36  
18  
10  
W
A
C
D
Steady  
State  
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
S
S
S
G
D
D
Continuous Drain  
Current R  
T = 25°C  
A
I
D
XXXXXX  
AYWZZ  
Steady  
State  
q
JA  
T = 100°C  
A
7
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
A
P
D
3.4  
1.7  
226  
W
Steady  
State  
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceabililty  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature T , T  
−55 to  
+175  
°C  
J
STG  
Range  
Source Current (Body Diode)  
I
30  
22  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 6.6 A  
)
L
pk  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Lead Temperature Soldering Reflow for  
Soldering Purposes (1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
May, 2022 − Rev. 1  
NVMFS016N06C/D  
 
12345678

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