DATA SHEET
www.onsemi.com
MOSFET- Power, Single
N-Channel, SO-8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
60 V
15.6 mW @ 10 V
33 A
60 V, 15.6 mW, 33 A
D (5−8)
NVMFS016N06C
Features
G (4)
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
S (1,2,3)
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
N−CHANNEL MOSFET
• NVMFWS016N06C − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
Applications
DFN5 5x6, 1.27P (SO−8FL)
CASE 488AA
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
T
= 25°C
I
D
33
A
C
Steady
State
Current R
q
JC
T
C
= 100°C
23
(Notes 1, 3)
MARKING DIAGRAM
Power Dissipation
T
= 25°C
P
36
18
10
W
A
C
D
Steady
State
D
R
(Note 1)
q
JC
T
C
= 100°C
S
S
S
G
D
D
Continuous Drain
Current R
T = 25°C
A
I
D
XXXXXX
AYWZZ
Steady
State
q
JA
T = 100°C
A
7
(Notes 1, 2, 3)
Power Dissipation
T = 25°C
A
P
D
3.4
1.7
226
W
Steady
State
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature T , T
−55 to
+175
°C
J
STG
Range
Source Current (Body Diode)
I
30
22
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 6.6 A
)
L
pk
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2022 − Rev. 1
NVMFS016N06C/D