Datasheet > NVMFS003P03P8ZT1G

NVMFS003P03P8ZT1G

更新时间： 2024-11-17 11:11:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	385K
描述
Power MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 mΩ, -234 A

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DATA SHEET

www.onsemi.com

MOSFET - Power, Single

P-Channel, SO8-FL

(BR)DSS

DS(on)

1.8 mW @ −10 V

2.9 mW @ −4.5 V

−30 V

−234 A

-30 V, 1.8 mW, -234 A

S (1, 2, 3)

NVMFS003P03P8Z

G (4)

Features

P−Channel

MOSFET

• Ultra Low R

to Improve System Efficiency

• Advanced Package Technology in 5x6mm for Space Saving and

DS(on)

Excellent Thermal Conduction

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

D (5, 6, 7, 8)

Typical Applications

• Power Load Switch

• Protection: Reverse Current, Over Voltage, and Reverse Negative

Voltage

DFN5 5x6, 1.27P (SO−8FL)

• Battery Management

CASE 488AA

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

−30

Unit

DSS

Gate−to−Source Voltage

"25

−234

−169

168.7

84.4

−35.7

−25.7

3.9

DFNW5 5x6 (FULL−CUT SO8FL WF)

Continuous Drain

Steady

State

= 25°C

= 100°C

= 25°C

CASE 507BA

Current R

(Note 2)

Power Dissipation R

(Note 2)

= 100°C

MARKING DIAGRAM

Continuous Drain Cur-

rent R (Notes 1, 2)

Steady T = 25°C

State

T = 100°C

XXXXXX

AYWZZ

Power Dissipation R

(Notes 1, 2)

T = 25°C

T = 100°C

1.9

Pulsed Drain Current

T = 25°C, t = 10 ms

−900

186

Single Pulse Drain−to−Source Avalanche

= Assembly Location

= Year

= Work Week

= Lot Traceability

Energy (I = 37.1 A)

Lpk

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

Publication Order Number:

April, 2022 − Rev. 2

NVMFS003P03P8Z/D

12 3 4 5 6 7...9

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与NVMFS003P03P8ZT1G相关器件

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NVMFS005N10MCLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel100 V, 5.1 m
NVMFS014P04M8LT1G	ONSEMI	获取价格	Power MOSFET, Single P-Channel, -40 V, 13.8 m
NVMFS015N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 54A, 12.2
NVMFS016N06CT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 60V, 33A, 15.6
NVMFS016N10MCLT1G	ONSEMI	获取价格	MOSFET - Power, Single, N-Channel 100 V, 14 m
NVMFS020N06CT1G	ONSEMI	获取价格	Power, Single, N-Channel, SO-8FL, 60 V, 19.6
NVMFS021N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100 V, 31 A, 23
NVMFS024N06CT1G	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel
NVMFS025P04M8LT1G	ONSEMI	获取价格	Power MOSFET, Single P-Channel, -40 V, 23 mΩ,
NVMFS027N10MCLT1G	ONSEMI	获取价格	Single N-Channel Power MOSFET 100V, 28A, 26mΩ

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