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NVMFS003P03P8ZT1G PDF预览

NVMFS003P03P8ZT1G

更新时间: 2024-11-17 11:11:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 385K
描述
Power MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 mΩ, -234 A

NVMFS003P03P8ZT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
P-Channel, SO8-FL  
V
R
I
D
(BR)DSS  
DS(on)  
1.8 mW @ 10 V  
2.9 mW @ 4.5 V  
30 V  
234 A  
-30 V, 1.8 mW, -234 A  
S (1, 2, 3)  
NVMFS003P03P8Z  
G (4)  
Features  
PChannel  
MOSFET  
Ultra Low R  
to Improve System Efficiency  
Advanced Package Technology in 5x6mm for Space Saving and  
DS(on)  
Excellent Thermal Conduction  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
D (5, 6, 7, 8)  
Typical Applications  
Power Load Switch  
Protection: Reverse Current, Over Voltage, and Reverse Negative  
1
Voltage  
DFN5 5x6, 1.27P (SO8FL)  
Battery Management  
CASE 488AA  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
30  
Unit  
V
V
DSS  
GatetoSource Voltage  
V
"25  
234  
169  
168.7  
84.4  
35.7  
25.7  
3.9  
V
GS  
DFNW5 5x6 (FULLCUT SO8FL WF)  
Continuous Drain  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
A
C
D
CASE 507BA  
Current R  
(Note 2)  
q
JC  
T
C
Power Dissipation R  
(Note 2)  
T
C
P
W
A
q
D
JC  
T
C
= 100°C  
MARKING DIAGRAM  
Continuous Drain Cur-  
rent R (Notes 1, 2)  
Steady T = 25°C  
State  
I
A
D
D
q
JA  
T = 100°C  
A
S
S
S
G
D
D
XXXXXX  
AYWZZ  
Power Dissipation R  
(Notes 1, 2)  
T = 25°C  
A
P
W
q
D
JA  
T = 100°C  
A
1.9  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
900  
186  
A
A
p
D
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Energy (I = 37.1 A)  
Lpk  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
°C  
J
stg  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
2
1. Surfacemounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.  
2. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
April, 2022 Rev. 2  
NVMFS003P03P8Z/D  
 

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