Datasheet > NVMFD5C672NLWFT1G

NVMFD5C672NLWFT1G

更新时间： 2024-11-17 11:12:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	227K
描述
双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ

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MOSFET – Power, Dual

N-Channel

60 V, 11.9 mW, 40 A

NVMFD5C672NL

Features

• Small Footprint (5x6 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• NVMFD5C672NLWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(ON)

11.9 mꢂ @ 10 V

16.8 mꢂ @ 4.5 V

60 V

40 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Dual N−Channel

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

ꢀ

(Notes 1, 2, 3)

Steady

State

Power Dissipation

(Notes 1, 2)

ꢀ

= 100°C

Continuous Drain

Current R

T = 25°C

MARKING

DIAGRAM

ꢀ

T = 100°C

8.0

3.1

1.5

161

(Notes 1, 2, 3)

Steady

State

D1 D1

Power Dissipation

T = 25°C

(Notes 1, 2)

ꢀ

T = 100°C

XXXXXX

AYWZZ

DFN8 5x6

(SO8FL)

Pulsed Drain Current

T = 25°C, t = 10 ꢁ s

CASE 506BT

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

D2 D2

stg

= Assembly Location

= Year

= Work Week

= Lot Traceability

Source Current (Body Diode)

35.2

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, I

= 2 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

3.55

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

ꢀ

47.51

ꢀ

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

June, 2020 − Rev. 3

NVMFD5C672NL/D

12 3 4 5 6 7

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与NVMFD5C672NLWFT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFD5C674NLT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 60V，42A，14.4mΩ
NVMFD5C674NLWFT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 60V，42A，14.4mΩ
NVMFD5C680NLT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 60V，26A，28mΩ
NVMFD5C680NLWFT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 60V，26A，28mΩ
NVMFD6H840NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 m
NVMFD6H840NLWFT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 m
NVMFD6H846NL	ONSEMI	获取价格	MOSFET - Power, Dual N-Channel
NVMFD6H846NLT1G	ONSEMI	获取价格	MOSFET - Power, Dual N-Channel
NVMFD6H846NLWFT1G	ONSEMI	获取价格	MOSFET - Power, Dual N-Channel
NVMFD6H852NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80 V, 25 A, 25.5

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