是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | Reach Compliance Code: | not_compliant |
Factory Lead Time: | 8 weeks | 风险等级: | 1.52 |
雪崩能效等级(Eas): | 47 mJ | 外壳连接: | DRAIN |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 26 A | 最大漏极电流 (ID): | 7.5 A |
最大漏源导通电阻: | 0.041 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F6 | JESD-609代码: | e3 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 19 W | 最大脉冲漏极电流 (IDM): | 57 A |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NVMFD6H840NLT1G | ONSEMI |
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Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 m | |
NVMFD6H840NLWFT1G | ONSEMI |
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Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 m | |
NVMFD6H846NL | ONSEMI |
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MOSFET - Power, Dual N-Channel | |
NVMFD6H846NLT1G | ONSEMI |
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MOSFET - Power, Dual N-Channel | |
NVMFD6H846NLWFT1G | ONSEMI |
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MOSFET - Power, Dual N-Channel | |
NVMFD6H852NLT1G | ONSEMI |
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Dual N-Channel Power MOSFET 80 V, 25 A, 25.5 | |
NVMFD6H852NLWFT1G | ONSEMI |
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Dual N-Channel Power MOSFET 80 V, 25 A, 25.5 | |
NVMFS003N10MCT1G | ONSEMI |
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MOSFET - Power, Single, N-Channel 100 V, 3.1 | |
NVMFS003P03P8ZT1G | ONSEMI |
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Power MOSFET - Power, Single P-Channel, SO8-F | |
NVMFS005N10MCLT1G | ONSEMI |
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MOSFET - Power, Single, N-Channel100 V, 5.1 m |