Datasheet > NVMFD5C668NLWFT1G

NVMFD5C668NLWFT1G

更新时间： 2024-09-30 11:11:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	227K
描述
功率 MOSFET，60V，68 A，6.5 mΩ，双 N 沟道

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVMFD5C668NLWFT1G 数据手册

浏览型号NVMFD5C668NLWFT1G的Datasheet PDF文件第2页

浏览型号NVMFD5C668NLWFT1G的Datasheet PDF文件第3页

浏览型号NVMFD5C668NLWFT1G的Datasheet PDF文件第4页

浏览型号NVMFD5C668NLWFT1G的Datasheet PDF文件第5页

NVMFD5C668NL

MOSFET – Power, Dual

N-Channel

60 V, 6.5 mW, 68 A

Features

www.onsemi.com

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical

Inspection

6.5 mW @ 10 V

9.2 mW @ 4.5 V

60 V

68 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Dual N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

57.5

(Notes 1, 2)

= 100°C

MARKING

DIAGRAM

Continuous Drain

Current R

T = 25°C

15.5

D1 D1

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

3.0

1.5

454

XXXXXX

AYWZZ

DFN8 5x6

(SO8FL)

(Notes 1 & 2)

T = 100°C

CASE 506BT

Pulsed Drain Current

T = 25°C, t = 10 ms

D2 D2

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

XXXXXX = 5C668L (NVMFD5C668NL) or

668LWF (NVMFD5C668NLWF)

= Assembly Location

= Year

= Work Week

= Lot Traceability

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

205

Energy (T = 25°C, I

= 3.22 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

2.6

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

50.26

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 0

NVMFD5C668NL/D

12 3 4 5 6 7

中文翻译

下载PDF

与NVMFD5C668NLWFT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFD5C672NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ
NVMFD5C672NLWFT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ
NVMFD5C674NLT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 60V，42A，14.4mΩ
NVMFD5C674NLWFT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 60V，42A，14.4mΩ
NVMFD5C680NLT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 60V，26A，28mΩ
NVMFD5C680NLWFT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 60V，26A，28mΩ
NVMFD6H840NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 m
NVMFD6H840NLWFT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 80 V, 74 A, 6.9 m
NVMFD6H846NL	ONSEMI	获取价格	MOSFET - Power, Dual N-Channel
NVMFD6H846NLT1G	ONSEMI	获取价格	MOSFET - Power, Dual N-Channel

与NVMFD5C668NLWFT1G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

24
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

21
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

20
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

32

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFD5C668NLWFT1G

NVMFD5C668NLWFT1G 数据手册

与NVMFD5C668NLWFT1G相关器件

与NVMFD5C668NLWFT1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVMFD5C668NLWFT1G

NVMFD5C668NLWFT1G 数据手册

与NVMFD5C668NLWFT1G相关器件

与NVMFD5C668NLWFT1G相关文章

您还可以找

您在本页遇到什么问题？