Datasheet > NVMFD5C470NWFT1G

NVMFD5C470NWFT1G

更新时间： 2024-11-17 02:52:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	214K
描述
MOSFET â Power, Dual N-Channel

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NVMFD5C470NWFT1G 数据手册

NVMFD5C470N

MOSFET – Power, Dual

N-Channel

40 V, 11.7 mW, 36 A

Features

• Small Footprint (5x6 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• NVMFD5C470NWF − Wettable Flank Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(ON)

40 V

11.7 mꢂ @ 10 V

36 A

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Dual N−Channel

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

ꢀ

(Notes 1, 2, 3)

Steady

State

Power Dissipation

(Notes 1, 2)

ꢀ

= 100°C

= 25°C

Continuous Drain

Current R

11.7

8.3

3.1

1.5

108

MARKING

DIAGRAM

ꢀ

= 100°C

= 25°C

(Notes 1, 2, 3)

Steady

State

D1 D1

Power Dissipation

(Notes 1 & 2)

ꢀ

XXXXXX

AYWZZ

= 100°C

DFN8 5x6

(SO8FL)

Pulsed Drain Current

= 25°C, t = 10 ꢁ s

CASE 506BT

D2 D2

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

XXXXXX = 5C470N (NVMFD5C470N)

Source Current (Body Diode)

= or 470NWF (NVMFD5C470NWF)

= Assembly Location

= Year

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, I

= 2 A)

L(pk)

= Work Week

= Lot Traceability

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

5.3

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

ꢀ

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

July, 2019 − Rev. 1

NVMFD5C470N/D

12 3 4 5 6 7

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与NVMFD5C470NWFT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFD5C478NLT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 40V，29A，14.5mΩ
NVMFD5C478NLWFT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 40V，29A，14.5mΩ
NVMFD5C478NT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 40 V，27 A，17.0 mΩ
NVMFD5C478NWFT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 40 V，27 A，17.0 mΩ
NVMFD5C650NLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 60V, 111A, 4.2mΩ
NVMFD5C650NLWFT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 60V, 111A, 4.2mΩ
NVMFD5C668NLT1G	ONSEMI	获取价格	功率 MOSFET，60V，68 A，6.5 mΩ，双 N 沟道
NVMFD5C668NLWFT1G	ONSEMI	获取价格	功率 MOSFET，60V，68 A，6.5 mΩ，双 N 沟道
NVMFD5C672NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ
NVMFD5C672NLWFT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，60V，49A，11.9mΩ

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