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NVMFD5C470NWFT1G PDF预览

NVMFD5C470NWFT1G

更新时间: 2024-11-17 02:52:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 214K
描述
MOSFET – Power, Dual N-Channel

NVMFD5C470NWFT1G 数据手册

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NVMFD5C470N  
MOSFET – Power, Dual  
N-Channel  
40 V, 11.7 mW, 36 A  
Features  
Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
NVMFD5C470NWF Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
40 V  
11.7 m@ 10 V  
36 A  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
Dual NChannel  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
Unit  
V
D1  
D2  
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
36  
A
C
D
G1  
G2  
JC  
T
C
25  
(Notes 1, 2, 3)  
Steady  
State  
S1  
S2  
Power Dissipation  
T
C
P
28  
W
A
D
R
(Notes 1, 2)  
JC  
T
C
= 100°C  
= 25°C  
14  
Continuous Drain  
Current R  
T
A
I
D
11.7  
8.3  
3.1  
1.5  
108  
MARKING  
DIAGRAM  
JA  
T
A
= 100°C  
= 25°C  
(Notes 1, 2, 3)  
Steady  
State  
D1 D1  
Power Dissipation  
T
A
P
W
D
S1  
G1  
S2  
G2  
D1  
1
R
(Notes 1 & 2)  
JA  
D1  
D2  
D2  
XXXXXX  
AYWZZ  
T
A
= 100°C  
DFN8 5x6  
(SO8FL)  
Pulsed Drain Current  
T
A
= 25°C, t = 10 s  
I
DM  
A
p
CASE 506BT  
D2 D2  
Operating Junction and Storage Temperature  
T , T  
55 to  
+ 175  
°C  
J
stg  
XXXXXX = 5C470N (NVMFD5C470N)  
Source Current (Body Diode)  
I
23  
49  
A
S
= or 470NWF (NVMFD5C470NWF)  
= Assembly Location  
= Year  
A
Y
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (T = 25°C, I  
= 2 A)  
J
L(pk)  
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
5.3  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
JC  
R
49  
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
July, 2019 Rev. 1  
NVMFD5C470N/D  
 

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