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NVMD6P02R2G PDF预览

NVMD6P02R2G

更新时间： 2024-11-23 12:36:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 124K
描述
Power MOSFET 6 A, 20 V, P−Channel SOIC−8, Dual

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NVMD6P02R2G 数据手册

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NTMD6P02, NVMD6P02  
Power MOSFET  
6 A, 20 V, P−Channel SOIC−8, Dual  
Features  
• Ultra Low R  
DS(on)  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
• Miniature Dual SOIC−8 Surface Mount Package  
• Diode Exhibits High Speed, Soft Recovery  
• Avalanche Energy Specified  
http://onsemi.com  
6 AMPERES, 20 VOLTS  
• These Devices are Pb−Free and are RoHS Compliant  
• NVMD Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
P−Channel  
D
Applications  
• Power Management in Portable and Battery−Powered Products,  
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards  
G
MAXIMUM RATINGS  
Rating  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
S
V
DSS  
−20  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Gate−to−Source Voltage − Continuous  
V
"12  
V
GS  
Thermal Resistance −  
Junction−to−Ambient (Note 1)  
R
62.5  
2.0  
−7.8  
−5.7  
0.5  
−3.89  
−40  
°C/W  
W
A
D1 D1 D2 D2  
q
JA  
8
Total Power Dissipation @ T = 25°C  
P
D
A
8
Continuous Drain Current @ T = 25°C  
I
I
P
A
D
D
D
D
1
Continuous Drain Current @ T = 70°C  
A
E6P02x  
A
SOIC−8  
AYWW G  
CASE 751  
G
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current (Note 4)  
W
A
I
STYLE 11  
I
A
DM  
1
Thermal Resistance −  
S1 G1 S2 G2  
Junction−to−Ambient (Note 2)  
R
98  
1.28  
−6.2  
−4.6  
0.3  
−3.01  
−35  
°C/W  
W
A
q
P
JA  
D
D
D
D
D
Total Power Dissipation @ T = 25°C  
A
E6P02 = Specific Device Code  
Continuous Drain Current @ T = 25°C  
I
I
P
A
x
A
Y
WW  
G
= Blank or S  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Continuous Drain Current @ T = 70°C  
A
A
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current (Note 4)  
W
A
I
I
A
DM  
Thermal Resistance −  
Junction−to−Ambient (Note 3)  
R
166  
0.75  
−4.8  
−3.5  
0.2  
−2.48  
−30  
°C/W  
W
A
(Note: Microdot may be in either location)  
q
P
JA  
D
D
D
D
D
Total Power Dissipation @ T = 25°C  
A
Continuous Drain Current @ T = 25°C  
I
I
P
I
A
Continuous Drain Current @ T = 70°C  
A
A
ORDERING INFORMATION  
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current (Note 4)  
W
A
†
Device  
Package  
Shipping  
I
A
DM  
NTMD6P02R2G  
NTMD6P02R2SG  
NVMD6P02R2G  
SOIC−8  
(Pb−Free)  
2500 / Tape & Reel  
2500 / Tape & Reel  
2500 / Tape & Reel  
Operating and Storage Temperature Range  
T , T  
J
−55 to  
+150  
°C  
stg  
SOIC−8  
(Pb−Free)  
Single Pulse Drain−to−Source Avalanche  
E
500  
mJ  
AS  
Energy − Starting T = 25°C (V = −20 Vdc,  
J
DD  
V
= −5.0 Vdc, Peak I = −5.0 Apk,  
L
GS  
SOIC−8  
L = 40 mH, R = 25 W)  
G
(Pb−Free)  
Maximum Lead Temperature for Soldering  
Purposes for 10 seconds  
T
260  
°C  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.  
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.  
3. Minimum FR−4 or G−10 PCB, t = steady state.  
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
December, 2012 − Rev. 4  
NTMD6P02R2/D  
 
123456

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