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NVMFD024N06CT1G PDF预览

NVMFD024N06CT1G

更新时间： 2023-09-03 20:32:26
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 252K
描述
Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 22.6 mΩ, 24 A

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NVMFD024N06CT1G 数据手册

 浏览型号NVMFD024N06CT1G的Datasheet PDF文件第2页浏览型号NVMFD024N06CT1G的Datasheet PDF文件第3页浏览型号NVMFD024N06CT1G的Datasheet PDF文件第4页浏览型号NVMFD024N06CT1G的Datasheet PDF文件第5页浏览型号NVMFD024N06CT1G的Datasheet PDF文件第6页浏览型号NVMFD024N06CT1G的Datasheet PDF文件第7页 
MOSFET – Power, Dual  
N-Channel, SO-8FL  
60 V, 22.6 mW, 24 A  
NVMFD024N06C  
Features  
• Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• NVMFWD024N06C − Wettable Flank Option for Enhanced Optical  
60 V  
22.6 mW @ 10 V  
24 A  
Inspection  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
• Power Tools, Battery Operated Vacuums  
• UAV/Drones, Material Handling  
• BMS/Storage, Home Automation  
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)  
Symbol  
Value  
60  
Units  
V
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
MARKING  
DIAGRAM  
V
DSS  
V
20  
V
GS  
1
24  
Continuous Drain  
Current RθJC (Note  
1,3)  
Steady  
State  
T
T
= 25°C  
= 100°C  
I
D
A
DFN8 5x6  
(SO−8FL)  
CASE 506BT  
C
XXXXXX  
AYWZZ  
17  
C
Power Dissipation  
RθJC (Note 1)  
Steady  
State  
T
T
= 25°C  
P
28  
14  
8
W
A
C
D
= 100°C  
C
XXXXXX = 24DN6C  
XXXXXX = (NVMFD024N06C) or  
XXXXXX = 24DN6W  
Continuous Drain  
Current RθJA  
(Note 1, 2,3)  
Steady  
State  
T = 25°C  
I
D
A
T = 100°C  
5
A
XXXXXX = (NVMFWD024N06C)  
A
Y
= Assembly Location  
= Year  
Power Dissipation  
RθJA (Note 1, 2)  
Steady  
State  
T = 25°C  
P
D
3.1  
1.5  
85  
W
A
T = 100°C  
A
W
ZZ  
= Work Week  
= Lot Traceability  
Pulsed Drain Cur-  
rent  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55  
to  
175  
°C  
J
stg  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Source Current (Body Diode)  
I
23  
14  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 5.3 A  
)
L
pk  
Lead Temperature Soldering Reflow for Sol-  
dering Purposes (1/8” from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
December, 2019 − Rev. 0  
NVMFD024N06C/D  
 
1234567

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