NVMFD5489NL
Power MOSFET
60 V, 65 mW, 12 A, Dual N−Ch Logic Level
Features
• Small Footprint (5x6 mm) for Compact Designs
• Low R
to Minimize Conduction Losses
DS(on)
www.onsemi.com
• Low Capacitance to Minimize Driver Losses
• 175°C Operating Temperature
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• NVMFD5489NLWF − Wettable Flank Option for Enhanced Optical
Inspection
65 mꢃ @ 10 V
79 mꢃ @ 4.5 V
60 V
12 A
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Dual N−Channel
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D1
D2
V
DSS
Gate−to−Source Voltage
V
"20
12
V
GS
Continuous Drain Cur-
rent R
T
= 25°C
I
A
mb
D
G1
G2
ꢀ
J−mb
T = 100°C
mb
8.8
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
mb
= 25°C
P
23.4
11.7
4.5
W
A
D
S1
S2
R
(Notes 1, 2, 3)
ꢀ
J−mb
T
mb
= 100°C
Continuous Drain Cur-
rent R
T = 25°C
I
A
D
MARKING DIAGRAM
ꢁ
JA
T = 100°C
A
3.2
(Notes 1, 3 & 4)
Steady
State
D1 D1
1
S1
G1
S2
G2
D1
D1
D2
D2
Power Dissipation
T = 25°C
P
3.0
1.5
62
W
DFN8 5x6
(SO8FL)
CASE 506BT
A
D
R
(Notes 1 & 3)
XXXXXX
AYWZZ
ꢁ
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ꢂ s
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
D2 D2
J
stg
XXXXXX = 5489NL
Source Current (Body Diode)
I
22
19
A
XXXXXX = (NVMFD5489NL) or
XXXXXX = 5489LW
XXXXXX = (NVMFD5489NLWF)
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (T = 25°C, I
G
= 19.5 A, L = 0.1 mH,
J
L(pk)
A
Y
= Assembly Location
= Year
R
= 25 ꢃ)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
NVMFD5489NLT1G
NVMFD5489NLT3G
NVMFD5489NLWFT1G
NVMFD5489NLWFT3G
DFN8
1500/
(Pb−Free) Tape & Reel
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
R
6.4
ꢀ
J−mb
DFN8 5000/
(Pb−Free) Tape & Reel
DFN8 1500/
Junction−to−Ambient − Steady State (Note 3)
50
°C/W
R
Junction−to−Ambient − Steady State
(min footprint)
ꢁ
JA
161
(Pb−Free) Tape & Reel
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (ꢀ ) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
DFN8 5000/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2
second are higher but are dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2015 − Rev. 3
NVMFD5489NL/D