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NVMFD5852NLWFT1G

更新时间： 2024-09-28 12:01:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
6页 129K
描述
Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL

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NVMFD5852NLWFT1G 技术参数

是否无铅： 不含铅生命周期：Not Recommended
零件包装代码：DFN包装说明：SMALL OUTLINE, R-PDSO-F6
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：7.7
Is Samacsys：N雪崩能效等级（Eas）：80 mJ
外壳连接：DRAIN配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：44 A
最大漏极电流 (ID)：15 A最大漏源导通电阻：0.012 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：27 W最大脉冲漏极电流 (IDM)：329 A
参考标准：AEC-Q101子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
晶体管元件材料：SILICONBase Number Matches：1

NVMFD5852NLWFT1G 数据手册

 浏览型号NVMFD5852NLWFT1G的Datasheet PDF文件第2页浏览型号NVMFD5852NLWFT1G的Datasheet PDF文件第3页浏览型号NVMFD5852NLWFT1G的Datasheet PDF文件第4页浏览型号NVMFD5852NLWFT1G的Datasheet PDF文件第5页浏览型号NVMFD5852NLWFT1G的Datasheet PDF文件第6页 
NVMFD5852NL,  
NVMFD5852NLWF  
Power MOSFET  
40 V, 6.9 mW, 44 A, Dual N−Channel Logic  
Level, Dual SO−8FL  
http://onsemi.com  
Features  
• Small Footprint (5x6 mm) for Compact Designs  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• NVMFD5852NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
• This is a Pb−Free Device  
6.9 mW @ 10 V  
40 V  
44 A  
12.0 mW @ 4.5 V  
Dual N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
D1  
D2  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
"20  
44  
V
GS  
G1  
G2  
Continuous Drain Cur-  
T
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T = 100°C  
mb  
31  
2, 3, 4)  
Steady  
State  
S1  
S2  
Power Dissipation  
T
mb  
= 25°C  
P
27  
13  
15  
W
A
D
R
(Notes 1, 2, 3)  
Y
MARKING DIAGRAM  
J−mb  
T
mb  
= 100°C  
D1 D1  
Continuous Drain Cur-  
T = 25°C  
I
A
D
1
rent R  
& 4)  
(Notes 1, 3  
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
q
JA  
T = 100°C  
A
10.6  
Steady  
State  
DFN8 5x6  
(SO8FL)  
5852xx  
AYWZZ  
Power Dissipation  
(Notes 1 & 3)  
T = 25°C  
P
3.2  
1.6  
329  
W
A
D
CASE 506BT  
R
q
JA  
T = 100°C  
A
D2 D2  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
5852NL = Specific Device Code  
for NVMFD5852NL  
5852LW = Specific Device Code  
for NVMFD5852NLWF  
Operating Junction and Storage Temperature  
T , T  
J
−55 to  
175  
°C  
stg  
Source Current (Body Diode)  
I
40  
80  
A
S
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Single Pulse Drain−to−Source Avalanche  
E
mJ  
AS  
Energy (T = 25°C, V = 10 V, I = 40 A,  
J
GS  
L(pk)  
L = 0.1 mH, R = 25 W)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NVMFD5852NLT1G  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
NVMFD5852NLWFT1G  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
5.6  
Y
J−mb  
°C/W  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second are higher but are dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
April, 2013 − Rev. 5  
NVMFD5852NL/D  
 
123456

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NVMFD5852NLWFT1G 替代型号

型号 品牌 替代类型 描述 数据表
NVMFD5852NLT1G ONSEMI

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