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NVMFD5853N

更新时间： 2024-02-24 17:59:08
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 130K
描述
Dual N−Channel Power MOSFET

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NVMFD5853N 数据手册

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NVMFD5853N,  
NVMFD5853NWF  
Power MOSFET  
40 V, 10 mW, 53 A, Dual N−Channel, Dual  
SO−8FL  
Features  
http://onsemi.com  
• Small Footprint (5x6 mm) for Compact Designs  
• Low R  
• Low Capacitance to Minimize Driver Losses  
• NVMFD5853NWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
• This is a Pb−Free and Halogen−Free Device  
to Minimize Conduction Losses  
DS(on)  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
40 V  
10 mW @ 10 V  
53 A  
Dual N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D1  
D2  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
"20  
53  
V
GS  
G1  
G2  
Continuous Drain Cur-  
rent R  
T
= 25°C  
= 100°C  
= 25°C  
I
A
C
D
q
JC  
T
C
37  
(Notes 1, 2, 3)  
Steady  
State  
S1  
S2  
Power Dissipation  
T
C
P
58  
W
A
D
R
(Notes 1, 2)  
q
JC  
T
C
= 100°C  
29  
MARKING DIAGRAM  
D1 D1  
Continuous Drain Cur-  
rent R  
T = 25°C  
A
I
12  
D
1
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
q
JA  
T = 100°C  
A
8.7  
3.1  
1.6  
165  
(Notes 1, 2 & 3)  
DFN8 5x6  
(SO8FL)  
CASE 506BT  
5853xx  
AYWZZ  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
D2 D2  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
5853N = NVMFD5853N  
5853WF = NVMFD5853NWF  
Operating Junction and Storage Temperature  
T , T  
−55 to  
°C  
J
stg  
175  
A
Y
= Assembly Location  
= Year  
Source Current (Body Diode)  
I
S
53  
40  
A
W
ZZ  
= Work Week  
= Lot Traceability  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, I  
= 28.3 A, L = 0.1 mH)  
J
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
†
Device  
Package Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NVMFD5853NT1G  
DFN8  
1500 / Tape &  
(Pb−Free)  
Reel  
NVMFD5853NWFT1G  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
2.6  
Unit  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Case − Steady State (Note 2)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
R
48  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Continuous DC current rating. Maximum current for pulses as long as 1  
second are higher but are dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 0  
NVMFD5853N/D  
 
123456

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