5秒后页面跳转
捷配首页

Datasheet > NVMFD5877NL
NVMFD5877NL PDF预览

NVMFD5877NL

更新时间： 2024-09-30 12:49:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 124K
描述
60 V, 39 m, 17 A, Dual N−Channel, Logic Level, Dual SO8FL

阅读下载

中文翻译

获取价格

NVMFD5877NL 数据手册

 浏览型号NVMFD5877NL的Datasheet PDF文件第2页浏览型号NVMFD5877NL的Datasheet PDF文件第3页浏览型号NVMFD5877NL的Datasheet PDF文件第4页浏览型号NVMFD5877NL的Datasheet PDF文件第5页浏览型号NVMFD5877NL的Datasheet PDF文件第6页 
NVMFD5877NL,  
NVMFD5877NLWF  
Power MOSFET  
60 V, 39 mW, 17 A, Dual N−Channel, Logic  
Level, Dual SO8FL  
Features  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
• NVMFD5877NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
39 mW @ 10 V  
60 mW @ 4.5 V  
60 V  
17 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
Dual N−Channel  
V
DSS  
D1  
D2  
Gate−to−Source Voltage  
V
"20  
17  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
12  
2, 3, 4)  
Steady  
State  
G1  
G2  
Power Dissipation  
T
mb  
P
23  
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
12  
S1  
S2  
Continuous Drain Cur-  
T = 25°C  
I
6
A
D
rent R  
3, 4)  
(Notes 1 &  
MARKING DIAGRAM  
q
JA  
T = 100°C  
A
5
Steady  
State  
D1 D1  
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
3.2  
1.6  
74  
W
A
D
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
R
1
q
JA  
5877xx  
AYWZZ  
T = 100°C  
A
DFN8 5x6  
(SO8FL)  
CASE 506BT  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D2 D2  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
5877NL = Specific Device Code  
for NVMFD5877NL  
Source Current (Body Diode)  
I
S
19  
A
5877LW = Specific Device Code  
for NVMFD5877NLWF  
Single Pulse Drain−  
to−Source Avalanche  
(I  
= 14.5 A, L =  
E
10.5  
mJ  
L(pk)  
AS  
0.1 mH)  
A
Y
= Assembly Location  
= Year  
Energy (T = 25°C,  
J
(I = 6.3 A, L =  
40  
V
= 24 V, V  
G
=
L(pk)  
DD  
GS  
2 mH)  
W
ZZ  
= Work Week  
= Lot Traceability  
10 V, R = 25 W)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NVMFD5877NLT1G  
NVMFD5877NLWFT1G  
NVMFD5877NLT3G  
NVMFD5877NLWFT3G  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
Junction−to−Mounting Board (top) − Steady  
State (Note 2, 3)  
R
6.5  
°C/W  
Y
J−mb  
DFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
DFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
November, 2013 − Rev. 8  
NVMFD5877NL/D  
 
123456

中文翻译

下载PDF

与NVMFD5877NL相关器件

型号 品牌 获取价格 描述 数据表
NVMFD5877NLT1G ONSEMI

获取价格

 		60 V, 39 m, 17 A, Dual N−Channel, Logic Le
NVMFD5877NLT3G ONSEMI

获取价格

 		60 V, 39 m, 17 A, Dual N−Channel, Logic Le
NVMFD5877NLWF ONSEMI

获取价格

 		60 V, 39 m, 17 A, Dual N−Channel, Logic Le
NVMFD5877NLWFT1G ONSEMI

获取价格

 		60 V, 39 m, 17 A, Dual N−Channel, Logic Le
NVMFD5877NLWFT3G ONSEMI

获取价格

 		60 V, 39 m, 17 A, Dual N−Channel, Logic Le
NVMFD5C446NLT1G ONSEMI

获取价格

 		双 N 沟道，功率 MOSFET，40V，145A，2.65mΩ
NVMFD5C446NLWFT1G ONSEMI

获取价格

 		双 N 沟道，功率 MOSFET，40V，145A，2.65mΩ
NVMFD5C446NT1G ONSEMI

获取价格

 		双 N 沟道功率 MOSFET 40V，127A， 2.9mΩ
NVMFD5C446NWFT1G ONSEMI

获取价格

 		双 N 沟道功率 MOSFET 40V，127A， 2.9mΩ
NVMFD5C462NLT1G ONSEMI

获取价格

 		双 N 沟道，功率 MOSFET，40V，84A，4.7mΩ

与NVMFD5877NL相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证