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NVMFD5C466NWFT1G

更新时间： 2024-09-30 11:11:39
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安森美 - ONSEMI /
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7页 229K
描述
双 N 沟道功率 MOSFET 40 V，46 A，8.1 mΩ

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NVMFD5C466NWFT1G 数据手册

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NVMFD5C466N  
MOSFET – Power, Dual  
N-Channel  
40 V, 8.1 mW, 49 A  
Features  
• Small Footprint (5x6 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
• NVMFD5C466NWF − Wettable Flank Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
40 V  
8.1 mꢂ @ 10 V  
49 A  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free and are RoHS Compliant  
Dual N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
D1  
D2  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
I
49  
A
C
D
G1  
G2  
ꢀ
JC  
T
C
= 100°C  
35  
(Notes 1, 2, 3)  
Steady  
State  
S1  
S2  
Power Dissipation  
T
C
= 25°C  
P
38  
19  
14  
W
A
D
R
(Notes 1, 2)  
ꢀ
JC  
T
C
= 100°C  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
MARKING  
DIAGRAM  
ꢀ
JA  
T = 100°C  
A
10  
(Notes 1, 2, 3)  
Steady  
State  
D1 D1  
Power Dissipation  
T = 25°C  
A
P
3.0  
1.5  
169  
W
D
S1  
G1  
S2  
G2  
D1  
R
(Notes 1 & 2)  
1
ꢀ
JA  
T = 100°C  
A
D1  
D2  
D2  
XXXXXX  
AYWZZ  
DFN8 5x6  
(SO8FL)  
Pulsed Drain Current  
T = 25°C, t = 10 ꢁ s  
I
DM  
A
A
p
CASE 506BT  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+ 175  
°C  
J
stg  
D2 D2  
XXXXXX = 5C466N (NVMFD5C466N)  
Source Current (Body Diode)  
I
31  
72  
A
S
= or 466NWF (NVMFD5C466NWF)  
= Assembly Location  
= Year  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
A
Y
Energy (T = 25°C, I  
= 3 A)  
J
L(pk)  
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State  
R
4
°C/W  
ꢀ
JC  
Junction−to−Ambient − Steady State (Note 2)  
R
49  
ꢀ
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
July, 2019 − Rev. 1  
NVMFD5C466N/D  
 
1234567

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