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NVMFD5C470NLWFT1G PDF预览

NVMFD5C470NLWFT1G

更新时间: 2024-11-17 11:12:43
品牌 Logo 应用领域
安森美 - ONSEMI 脉冲光电二极管晶体管
页数 文件大小 规格书
7页 211K
描述
双 N 沟道,功率 MOSFET,40V,36A,11.5mΩ

NVMFD5C470NLWFT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SO-8FL, DFN-8Reach Compliance Code:not_compliant
Factory Lead Time:7 weeks风险等级:1.48
雪崩能效等级(Eas):49 mJ外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏源导通电阻:0.0178 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):110 A
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

NVMFD5C470NLWFT1G 数据手册

 浏览型号NVMFD5C470NLWFT1G的Datasheet PDF文件第2页浏览型号NVMFD5C470NLWFT1G的Datasheet PDF文件第3页浏览型号NVMFD5C470NLWFT1G的Datasheet PDF文件第4页浏览型号NVMFD5C470NLWFT1G的Datasheet PDF文件第5页浏览型号NVMFD5C470NLWFT1G的Datasheet PDF文件第6页浏览型号NVMFD5C470NLWFT1G的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – Power, Dual  
N-Channel  
40 V, 11.5 mW, 36 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
11.5 m@ 10 V  
17.8 m@ 4.5 V  
40 V  
36 A  
NVMFD5C470NL  
Dual NChannel  
D1  
D2  
Features  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G
G1  
G2  
NVMFD5C470NLWF Wettable Flank Option for Enhanced Optical  
Inspection  
S1  
S2  
AECQ101 Qualified and PPAP Capable  
These Devices are PbFree and are RoHS Compliant  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
40  
Unit  
V
D1 D1  
S1  
G1  
S2  
G2  
D1  
1
V
DSS  
D1  
D2  
D2  
XXXXXX  
AYWZZ  
DFN8 5x6  
(SO8FL)  
CASE 506BT  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
D
36  
A
C
D2 D2  
JC  
T
C
25  
(Notes 1, 2, 3)  
Steady  
State  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Power Dissipation  
T
C
P
D
28  
W
A
R
(Notes 1, 2)  
JC  
T
C
= 100°C  
14  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
11  
JA  
T = 100°C  
A
8.0  
3.0  
1.5  
110  
(Notes 1, 2, 3)  
Steady  
State  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Power Dissipation  
T = 25°C  
A
P
D
W
R
(Notes 1, 2)  
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 s  
A
I
DM  
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
23  
49  
A
S
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
Energy (T = 25°C, I  
= 2 A)  
J
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
5.3  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
JC  
R
49  
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
April, 2022 Rev. 6  
NVMFD5C470NL/D  
 

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