Datasheet > NVMFD5C446NT1G

NVMFD5C446NT1G

更新时间： 2024-11-20 11:13:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	289K
描述
双 N 沟道功率 MOSFET 40V，127A， 2.9mΩ

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NVMFD5C446NT1G 数据手册

NVMFD5C446N

Power MOSFET

40 V, 2.9 mW, 127 A, Dual N−Channel

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

www.onsemi.com

• NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAX

I MAX

(BR)DSS

DS(ON)

40 V

2.9 mꢂ @ 10 V

127 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

Dual N−Channel

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

(Notes 1, 2, 3)

= 25°C

= 100°C

= 25°C

127

ꢀ

Steady

State

Power Dissipation

(Notes 1, 2)

ꢀ

= 100°C

Continuous Drain

Current R

T = 25°C

ꢀ

T = 100°C

(Notes 1, 2, 3)

Steady

State

MARKING

DIAGRAM

Power Dissipation

T = 25°C

3.2

1.6

637

(Notes 1 & 2)

ꢀ

T = 100°C

D1 D1

Pulsed Drain Current

T = 25°C, t = 10 ꢁ s

XXXXXX

AYWZZ

DFN8 5x6

(SO8FL)

CASE 506BT

Operating Junction and Storage Temperature

T , T

−55 to

+ 175

°C

stg

Source Current (Body Diode)

D2 D2

Single Pulse Drain−to−Source Avalanche

223

XXXXXX = 5C446N (NVMFD5C446N)

Energy (T = 25°C, I

= 11 A)

L(pk)

= or 446NWF (NVMFD5C446NWF)

= Assembly Location

= Year

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Work Week

= Lot Traceability

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

Parameter

Symbol

Value

1.7

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

ꢀ

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

October, 2017 − Rev. 1

NVMFD5C446NL/D

12 3 4 5 6 7

中文翻译

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与NVMFD5C446NT1G相关器件

型号	品牌	获取价格	描述	数据表
NVMFD5C446NWFT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 40V，127A， 2.9mΩ
NVMFD5C462NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，40V，84A，4.7mΩ
NVMFD5C462NLWFT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，40V，84A，4.7mΩ
NVMFD5C462NT1G	ONSEMI	获取价格	功率 MOSFET，40V，70A，5.4mΩ，双 N 沟道，逻辑电平
NVMFD5C462NWFT1G	ONSEMI	获取价格	功率 MOSFET，40V，70A，5.4mΩ，双 N 沟道，逻辑电平
NVMFD5C466NLT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，40V，52A，7.4mΩ
NVMFD5C466NLWFT1G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，40V，52A，7.4mΩ
NVMFD5C466NT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 40 V，46 A，8.1 mΩ
NVMFD5C466NWFT1G	ONSEMI	获取价格	双 N 沟道功率 MOSFET 40 V，46 A，8.1 mΩ
NVMFD5C470N	ONSEMI	获取价格	MOSFET â Power, Dual N-Channel

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