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NVMFD5877NLWFT1G

更新时间： 2024-11-23 12:49:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 124K
描述
60 V, 39 m, 17 A, Dual N−Channel, Logic Level, Dual SO8FL

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NVMFD5877NLWFT1G 数据手册

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NVMFD5877NL,  
NVMFD5877NLWF  
Power MOSFET  
60 V, 39 mW, 17 A, Dual N−Channel, Logic  
Level, Dual SO8FL  
Features  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
http://onsemi.com  
• NVMFD5877NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
39 mW @ 10 V  
60 mW @ 4.5 V  
60 V  
17 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
Dual N−Channel  
V
DSS  
D1  
D2  
Gate−to−Source Voltage  
V
"20  
17  
V
GS  
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
12  
2, 3, 4)  
Steady  
State  
G1  
G2  
Power Dissipation  
T
mb  
P
23  
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
12  
S1  
S2  
Continuous Drain Cur-  
T = 25°C  
I
6
A
D
rent R  
3, 4)  
(Notes 1 &  
MARKING DIAGRAM  
q
JA  
T = 100°C  
A
5
Steady  
State  
D1 D1  
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
3.2  
1.6  
74  
W
A
D
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
R
1
q
JA  
5877xx  
AYWZZ  
T = 100°C  
A
DFN8 5x6  
(SO8FL)  
CASE 506BT  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D2 D2  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
5877NL = Specific Device Code  
for NVMFD5877NL  
Source Current (Body Diode)  
I
S
19  
A
5877LW = Specific Device Code  
for NVMFD5877NLWF  
Single Pulse Drain−  
to−Source Avalanche  
(I  
= 14.5 A, L =  
E
10.5  
mJ  
L(pk)  
AS  
0.1 mH)  
A
Y
= Assembly Location  
= Year  
Energy (T = 25°C,  
J
(I = 6.3 A, L =  
40  
V
= 24 V, V  
G
=
L(pk)  
DD  
GS  
2 mH)  
W
ZZ  
= Work Week  
= Lot Traceability  
10 V, R = 25 W)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NVMFD5877NLT1G  
NVMFD5877NLWFT1G  
NVMFD5877NLT3G  
NVMFD5877NLWFT3G  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
Junction−to−Mounting Board (top) − Steady  
State (Note 2, 3)  
R
6.5  
°C/W  
Y
J−mb  
DFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
DFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
November, 2013 − Rev. 8  
NVMFD5877NL/D  
 
123456

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NVMFD5877NLWFT1G 替代型号

型号 品牌 替代类型 描述 数据表
NVMFD5877NLT3G ONSEMI

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 60 V, 39 m, 17 A, Dual N−Channel, Logic Le
NVMFD5877NLT1G ONSEMI

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