Datasheet > NVMFD5853NL

NVMFD5853NL

更新时间： 2024-09-28 12:26:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	126K
描述
Power MOSFET 40 V, 10 m, 34 A, Dual N.Channel Logic Level, Dual SO.8FL

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NVMFD5853NL 数据手册

NVMFD5853NL,

NVMFD5853NLWF

Power MOSFET

40 V, 10 mW, 34 A, Dual N−Channel Logic

Level, Dual SO−8FL

Features

http://onsemi.com

• Small Footprint (5x6 mm) for Compact Designs

• Low R

to Minimize Conduction Losses

DS(on)

MAX

I MAX

(BR)DSS

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVMFD5853NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device

10 mW @ 10 V

15 mW @ 4.5 V

40 V

34 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Dual N−Channel

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

"20

Continuous Drain Cur-

= 25°C

rent R

(Notes 1,

J−mb

T = 100°C

2, 3, 4)

Steady

State

Power Dissipation

= 25°C

(Notes 1, 2, 3)

J−mb

= 100°C

Continuous Drain Cur-

T = 25°C

MARKING DIAGRAM

rent R

& 4)

(Notes 1, 3

D1 D1

T = 100°C

8.5

Steady

State

Power Dissipation

(Notes 1 & 3)

T = 25°C

3.0

1.5

165

DFN8 5x6

(SO8FL)

CASE 506BT

5853xx

AYWZZ

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

D2 D2

Operating Junction and Storage Temperature

T , T

−55 to

°C

stg

175

5853NL = Specific Device Code

for NVMFD5853NL

5853LW = Specific Device Code

for NVMFD5853NLWF

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, V = 10 V, I = 28.3 A,

L(pk)

= Assembly Location

= Year

= Work Week

= Lot Traceability

L = 0.1 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

†

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Device

Package

Shipping

Parameter

Symbol

Value

Unit

NVMFD5853NLT1G

DFN8

(Pb−Free)

1500 / Tape &

Reel

Junction−to−Mounting Board (top) − Steady

6.2

J−mb

State (Notes 2, 3)

NVMFD5853NLWFT1G

DFN8

(Pb−Free)

1500 / Tape &

Reel

Junction−to−Ambient − Steady State (Note 3)

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Junction−to−Ambient − Steady State (min foot-

162

print)

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second are higher but are dependent on pulse duration and duty cycle.

Publication Order Number:

April, 2013 − Rev. 3

NVMFD5853NL/D

12 3 4 5 6

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与NVMFD5853NL相关器件

型号	品牌	获取价格	描述	数据表
NVMFD5853NLT1G	ONSEMI	获取价格	Power MOSFET 40 V, 10 m, 34 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5853NLWF	ONSEMI	获取价格	Power MOSFET 40 V, 10 m, 34 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5853NLWFT1G	ONSEMI	获取价格	Power MOSFET 40 V, 10 m, 34 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5853NT1G	ONSEMI	获取价格	Dual NâChannel Power MOSFET
NVMFD5853NWFT1G	ONSEMI	获取价格	Dual NâChannel Power MOSFET
NVMFD5873NL	ONSEMI	获取价格	Power MOSFET 60 V, 13 m, 58 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5873NL_14	ONSEMI	获取价格	Power MOSFET
NVMFD5873NLT1G	ONSEMI	获取价格	Power MOSFET 60 V, 13 m, 58 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5873NLWF	ONSEMI	获取价格	Power MOSFET 60 V, 13 m, 58 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5873NLWFT1G	ONSEMI	获取价格	Power MOSFET 60 V, 13 m, 58 A, Dual N.Channel Logic Level, Dual SO.8FL

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