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NVMFD5875NLT3G

更新时间： 2024-10-01 01:05:47
品牌 Logo 应用领域
安森美 - ONSEMI 脉冲光电二极管晶体管
页数 文件大小 规格书
6页 82K
描述
Dual N−Channel Power MOSFET

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中文翻译

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NVMFD5875NLT3G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6Reach Compliance Code：not_compliant
Factory Lead Time：7 weeks风险等级：5.14
雪崩能效等级（Eas）：40 mJ配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：22 A
最大漏极电流 (ID)：7 A最大漏源导通电阻：0.045 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：32 W
最大脉冲漏极电流 (IDM)：80 A参考标准：AEC-Q101
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
晶体管元件材料：SILICON最大关闭时间（toff）：15.7 ns
最大开启时间（吨）：11.3 nsBase Number Matches：1

NVMFD5875NLT3G 数据手册

 浏览型号NVMFD5875NLT3G的Datasheet PDF文件第2页浏览型号NVMFD5875NLT3G的Datasheet PDF文件第3页浏览型号NVMFD5875NLT3G的Datasheet PDF文件第4页浏览型号NVMFD5875NLT3G的Datasheet PDF文件第5页浏览型号NVMFD5875NLT3G的Datasheet PDF文件第6页 
NVMFD5875NL  
Product Preview  
Power MOSFET  
60 V, 33 mW, 22 A, Dual N−Channel, Logic  
Level, Dual SO8FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
www.onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• NVMFD5875NLWF − Wettable Flanks Option for Enhanced Optical  
Inspection  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• AEC−Q101 Qualified and PPAP Capable  
33 mW @ 10 V  
45 mW @ 4.5 V  
60 V  
22 A  
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
Dual N−Channel  
V
DSS  
D1  
D2  
Gate−to−Source Voltage  
Continuous Drain Cur-  
V
"20  
22  
V
GS  
T
= 25°C  
= 100°C  
= 25°C  
I
A
C
D
rent R  
3, 4)  
(Notes 1, 2,  
q
JC  
T
C
15  
Steady  
State  
G1  
G2  
Power Dissipation  
(Notes 1, 2, 3)  
T
C
P
32  
W
A
D
R
q
JC  
S1  
S2  
T
C
= 100°C  
16  
Continuous Drain Cur-  
T = 25°C  
A
I
7
D
MARKING DIAGRAM  
rent R  
3, 4)  
(Notes 1 &  
q
JA  
T = 100°C  
A
5.8  
3.2  
2.2  
80  
Steady  
State  
D1 D1  
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
A
P
W
D
1
R
q
JA  
5875xx  
AYWZZ  
T = 100°C  
A
DFN8 5x6  
(SO8FL)  
CASE 506BT  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
D2 D2  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
5875NL = Specific Device Code  
for NVMFD5875NL  
Source Current (Body Diode)  
I
S
19  
A
5875LW = Specific Device Code  
for NVMFD5875NLWF  
Single Pulse Drain−  
to−Source Avalanche  
(I  
= 14.5 A, L =  
E
10.5  
mJ  
L(pk)  
AS  
0.1 mH)  
A
Y
= Assembly Location  
= Year  
Energy (T = 25°C,  
J
(I = 6.3 A, L =  
40  
V
DD  
= 24 V, V  
=
L(pk)  
GS  
W
ZZ  
= Work Week  
= Lot Traceability  
2 mH)  
10 V, R = 25 W)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
NVMFD5875NLT1G  
NVMFD5875NLWFT1G  
NVMFD5875NLT3G  
NVMFD5875NLWFT3G  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
Parameter  
Symbol  
Value  
4.65  
47  
Unit  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
Junction−to−Case − Steady State (Note 2, 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
JA  
R
q
DFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
DFN8  
(Pb−Free)  
5000 / Tape &  
Reel  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
4. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
November, 2015 − Rev. P1  
NVMFD5875NL/D  
 
123456

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