Datasheet > NVMFD5873NL_14

NVMFD5873NL_14

更新时间： 2024-10-01 01:13:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	82K
描述
Power MOSFET

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中文翻译

获取价格

数据手册

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NVMFD5873NL_14 数据手册

NVMFD5873NL

Power MOSFET

60 V, 13 mW, 58 A, Dual N−Channel Logic

Level, Dual SO−8FL

Features

• Small Footprint (5x6 mm) for Compact Designs

http://onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVMFD5873NLWF − Wettable Flanks Option for Enhanced Optical

Inspection

MAX

I MAX

(BR)DSS

DS(on)

13 mW @ 10 V

60 V

58 A

16.5 mW @ 4.5 V

• AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device

Dual N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

"20

Continuous Drain Cur-

= 25°C

rent R

(Notes 1,

J−mb

T = 100°C

2, 3, 4)

Steady

State

Power Dissipation

= 25°C

107

(Notes 1, 2, 3)

J−mb

MARKING DIAGRAM

= 100°C

D1 D1

Continuous Drain Cur-

T = 25°C

rent R

& 4)

(Notes 1, 3

T = 100°C

7.0

Steady

State

DFN8 5x6

(SO8FL)

5873xx

AYWZZ

Power Dissipation

(Notes 1 & 3)

T = 25°C

3.1

1.6

190

CASE 506BT

T = 100°C

D2 D2

Pulsed Drain Current

T = 25°C, t = 10 ms

5873NL = Specific Device Code

for NVMFD5873NL

5873LW = Specific Device Code

for NVMFD5873NLWF

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode)

= Assembly Location

= Year

= Work Week

= Lot Traceability

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, V = 10 V, I = 28.3 A,

L(pk)

L = 0.1 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

†

Device

Package

Shipping

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

NVMFD5873NLT1G

DFN8

(Pb−Free)

1500 / Tape &

Reel

Parameter

Symbol

Value

Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2, 3)

1.4

J−mb

NVMFD5873NLWFT1G

DFN8

(Pb−Free)

1500 / Tape &

Reel

°C/W

Junction−to−Ambient − Steady State (Note 3)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Maximum current for pulses as long as 1 second are higher but are dependent

on pulse duration and duty cycle.

Publication Order Number:

September, 2014 − Rev. 3

NVMFD5873NL/D

12 3 4 5 6

中文翻译

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与NVMFD5873NL_14相关器件

型号	品牌	获取价格	描述	数据表
NVMFD5873NLT1G	ONSEMI	获取价格	Power MOSFET 60 V, 13 m, 58 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5873NLWF	ONSEMI	获取价格	Power MOSFET 60 V, 13 m, 58 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5873NLWFT1G	ONSEMI	获取价格	Power MOSFET 60 V, 13 m, 58 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5875NL	ONSEMI	获取价格	Dual NâChannel Power MOSFET
NVMFD5875NLT1G	ONSEMI	获取价格	Dual NâChannel Power MOSFET
NVMFD5875NLT3G	ONSEMI	获取价格	Dual NâChannel Power MOSFET
NVMFD5875NLWFT1G	ONSEMI	获取价格	Dual NâChannel Power MOSFET
NVMFD5875NLWFT3G	ONSEMI	获取价格	Dual NâChannel Power MOSFET
NVMFD5877NL	ONSEMI	获取价格	60 V, 39 m, 17 A, Dual NâChannel, Logic Le
NVMFD5877NLT1G	ONSEMI	获取价格	60 V, 39 m, 17 A, Dual NâChannel, Logic Le

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