5秒后页面跳转
捷配首页

Datasheet > NVMFD5489NLWFT3G
NVMFD5489NLWFT3G PDF预览

NVMFD5489NLWFT3G

更新时间： 2024-02-21 21:54:38
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 87K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

NVMFD5489NLWFT3G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.11
最大漏极电流 (Abs) (ID)：12 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e3湿度敏感等级：1
最高工作温度：175 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：23.4 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
Base Number Matches：1

NVMFD5489NLWFT3G 数据手册

 浏览型号NVMFD5489NLWFT3G的Datasheet PDF文件第2页浏览型号NVMFD5489NLWFT3G的Datasheet PDF文件第3页浏览型号NVMFD5489NLWFT3G的Datasheet PDF文件第4页浏览型号NVMFD5489NLWFT3G的Datasheet PDF文件第5页浏览型号NVMFD5489NLWFT3G的Datasheet PDF文件第6页 
NVMFD5489NL  
Power MOSFET  
60 V, 65 mW, 12 A, Dual N−Ch Logic Level  
Features  
• Small Footprint (5x6 mm) for Compact Designs  
• Low R  
to Minimize Conduction Losses  
DS(on)  
www.onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• 175°C Operating Temperature  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• NVMFD5489NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
65 mꢃ @ 10 V  
79 mꢃ @ 4.5 V  
60 V  
12 A  
• AEC−Q101 Qualified and PPAP Capable  
• This is a Pb−Free Device  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Dual N−Channel  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
D1  
D2  
V
DSS  
Gate−to−Source Voltage  
V
"20  
12  
V
GS  
Continuous Drain Cur-  
rent R  
T
= 25°C  
I
A
mb  
D
G1  
G2  
ꢀ
J−mb  
T = 100°C  
mb  
8.8  
(Notes 1, 2, 3, 4)  
Steady  
State  
Power Dissipation  
T
mb  
= 25°C  
P
23.4  
11.7  
4.5  
W
A
D
S1  
S2  
R
(Notes 1, 2, 3)  
ꢀ
J−mb  
T
mb  
= 100°C  
Continuous Drain Cur-  
rent R  
T = 25°C  
I
A
D
MARKING DIAGRAM  
ꢁ
JA  
T = 100°C  
A
3.2  
(Notes 1, 3 & 4)  
Steady  
State  
D1 D1  
1
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
Power Dissipation  
T = 25°C  
P
3.0  
1.5  
62  
W
DFN8 5x6  
(SO8FL)  
CASE 506BT  
A
D
R
(Notes 1 & 3)  
XXXXXX  
AYWZZ  
ꢁ
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ꢂ s  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
D2 D2  
J
stg  
XXXXXX = 5489NL  
Source Current (Body Diode)  
I
22  
19  
A
XXXXXX = (NVMFD5489NL) or  
XXXXXX = 5489LW  
XXXXXX = (NVMFD5489NLWF)  
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, I  
G
= 19.5 A, L = 0.1 mH,  
J
L(pk)  
A
Y
= Assembly Location  
= Year  
R
= 25 ꢃ)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
W
ZZ  
= Work Week  
= Lot Traceability  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
NVMFD5489NLT1G  
NVMFD5489NLT3G  
NVMFD5489NLWFT1G  
NVMFD5489NLWFT3G  
DFN8  
1500/  
(Pb−Free) Tape & Reel  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
6.4  
ꢀ
J−mb  
DFN8 5000/  
(Pb−Free) Tape & Reel  
DFN8 1500/  
Junction−to−Ambient − Steady State (Note 3)  
50  
°C/W  
R
Junction−to−Ambient − Steady State  
(min footprint)  
ꢁ
JA  
161  
(Pb−Free) Tape & Reel  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (ꢀ ) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
DFN8 5000/  
(Pb−Free) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2
second are higher but are dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2015 − Rev. 3  
NVMFD5489NL/D  
 
123456

中文翻译

下载PDF

与NVMFD5489NLWFT3G相关器件

型号 品牌 获取价格 描述 数据表
NVMFD5852NL ONSEMI

获取价格

 		Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5852NL_14 ONSEMI

获取价格

 		Power MOSFET
NVMFD5852NLT1G ONSEMI

获取价格

 		Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5852NLWF ONSEMI

获取价格

 		Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5852NLWFT1G ONSEMI

获取价格

 		Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5853N ONSEMI

获取价格

 		Dual N−Channel Power MOSFET
NVMFD5853NL ONSEMI

获取价格

 		Power MOSFET 40 V, 10 m, 34 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5853NLT1G ONSEMI

获取价格

 		Power MOSFET 40 V, 10 m, 34 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5853NLWF ONSEMI

获取价格

 		Power MOSFET 40 V, 10 m, 34 A, Dual N.Channel Logic Level, Dual SO.8FL
NVMFD5853NLWFT1G ONSEMI

获取价格

 		Power MOSFET 40 V, 10 m, 34 A, Dual N.Channel Logic Level, Dual SO.8FL

与NVMFD5489NLWFT3G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证