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NVMFD5852NL

更新时间： 2024-02-02 13:40:48
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 129K
描述
Power MOSFET 40 V, 6.9 mohm, 44 A, Dual N.Channel Logic Level, Dual SO.8FL

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NVMFD5852NL 数据手册

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NVMFD5852NL,  
NVMFD5852NLWF  
Power MOSFET  
40 V, 6.9 mW, 44 A, Dual N−Channel Logic  
Level, Dual SO−8FL  
http://onsemi.com  
Features  
• Small Footprint (5x6 mm) for Compact Designs  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• NVMFD5852NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
• This is a Pb−Free Device  
6.9 mW @ 10 V  
40 V  
44 A  
12.0 mW @ 4.5 V  
Dual N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
D1  
D2  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
"20  
44  
V
GS  
G1  
G2  
Continuous Drain Cur-  
T
= 25°C  
I
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T = 100°C  
mb  
31  
2, 3, 4)  
Steady  
State  
S1  
S2  
Power Dissipation  
T
mb  
= 25°C  
P
27  
13  
15  
W
A
D
R
(Notes 1, 2, 3)  
Y
MARKING DIAGRAM  
J−mb  
T
mb  
= 100°C  
D1 D1  
Continuous Drain Cur-  
T = 25°C  
I
A
D
1
rent R  
& 4)  
(Notes 1, 3  
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
q
JA  
T = 100°C  
A
10.6  
Steady  
State  
DFN8 5x6  
(SO8FL)  
5852xx  
AYWZZ  
Power Dissipation  
(Notes 1 & 3)  
T = 25°C  
P
3.2  
1.6  
329  
W
A
D
CASE 506BT  
R
q
JA  
T = 100°C  
A
D2 D2  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
5852NL = Specific Device Code  
for NVMFD5852NL  
5852LW = Specific Device Code  
for NVMFD5852NLWF  
Operating Junction and Storage Temperature  
T , T  
J
−55 to  
175  
°C  
stg  
Source Current (Body Diode)  
I
40  
80  
A
S
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
Single Pulse Drain−to−Source Avalanche  
E
mJ  
AS  
Energy (T = 25°C, V = 10 V, I = 40 A,  
J
GS  
L(pk)  
L = 0.1 mH, R = 25 W)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NVMFD5852NLT1G  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
NVMFD5852NLWFT1G  
DFN8  
(Pb−Free)  
1500 / Tape &  
Reel  
Junction−to−Mounting Board (top) − Steady  
State (Notes 2, 3)  
R
5.6  
Y
J−mb  
°C/W  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second are higher but are dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
April, 2013 − Rev. 5  
NVMFD5852NL/D  
 
123456

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