MOSFET - Power, Dual
N-Channel, DUAL SO-8FL
60 V, 29.7 mW, 19 A
NVMFD030N06C
Features
www.onsemi.com
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• NVMFWD030N06C − Wettable Flank Option for Enhanced Optical
Inspection
60 V
29.7 mW @ 10 V
19 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol Value Units
MARKING
DIAGRAM
V
60
20
19
13
23
11
7
V
V
A
DSS
V
GS
1
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
D
C
XXXXXX
AYWZZ
DFN8 5x6
(SO−8FL)
CASE 506BT
q
JC
T
C
(Notes 1, 3)
Power Dissipation
Steady
State
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
XXXXXX = Specific Device Code
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
q
JA
T = 100°C
A
5
(Notes 1, 2, 3)
Power Dissipation
Steady
State
T = 25°C
A
P
3.2
1.6
63
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
Pulsed Drain Current T = 25°C, t = 10 ms
I
DM
A
A
p
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
19
10
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 4.4 A
)
L
pk
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2020 − Rev. 0
NVMFD030N06C/D