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NVMFD5485NLT3G

更新时间： 2024-01-21 00:42:26
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 86K
描述
Power MOSFET

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中文翻译

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NVMFD5485NLT3G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：,针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.12JESD-609代码：e3
湿度敏感等级：1端子面层：Tin (Sn)
Base Number Matches：1

NVMFD5485NLT3G 数据手册

 浏览型号NVMFD5485NLT3G的Datasheet PDF文件第2页浏览型号NVMFD5485NLT3G的Datasheet PDF文件第3页浏览型号NVMFD5485NLT3G的Datasheet PDF文件第4页浏览型号NVMFD5485NLT3G的Datasheet PDF文件第5页浏览型号NVMFD5485NLT3G的Datasheet PDF文件第6页 
NVMFD5485NL  
Power MOSFET  
60 V, 44 mW, 20 A, Dual N−Channel  
Features  
• Small Footprint (5x6 mm) for Compact Designs  
• Low R  
to Minimize Conduction Losses  
DS(on)  
www.onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• 175°C Operating Temperature  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• NVMFD5485NLWF − Wettable Flank Option for Enhanced Optical  
Inspection  
44 mꢂ @ 10 V  
60 mꢂ @ 4.5 V  
60 V  
20 A  
• AEC−Q101 Qualified and PPAP Capable  
• This is a Pb−Free Device  
Dual N−Channel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
D1  
D2  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
"20  
19.5  
V
GS  
G1  
G2  
Continuous Drain  
Current R  
T
= 25°C  
I
A
C
D
ꢀ
JC  
T
C
= 100°C  
13.8  
S1  
S2  
(Notes 1, 2, 4)  
Steady  
State  
Power Dissipation  
T
C
= 25°C  
= 100°C  
= 25°C  
P
38.5  
19.2  
5.3  
W
A
D
R
(Notes 1, 2)  
ꢀ
JC  
MARKING DIAGRAM  
T
C
D1 D1  
Continuous Drain  
Current R  
T
A
I
1
D
S1  
G1  
S2  
G2  
D1  
D1  
D2  
D2  
ꢀ
JA  
DFN8 5x6  
(SO8FL)  
T
A
= 100°C  
3.8  
(Notes 1, 3 & 4)  
Steady  
State  
XXXXXX  
AYWZZ  
Power Dissipation  
T
A
= 25°C  
P
2.9  
1.4  
113  
W
CASE 506BT  
D
R
(Notes 1 & 3)  
ꢀ
JA  
T
A
= 100°C  
D2 D2  
Pulsed Drain Current  
T
A
= 25°C, t = 10 ꢁ s  
I
DM  
A
p
XXXXXX = 5485NL  
XXXXXX = (NVMFD5485NL) or  
XXXXXX = 5485LW  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
XXXXXX = (NVMFD5485NLWF)  
Source Current (Body Diode)  
I
37  
31  
A
S
A
= Assembly Location  
= Year  
Y
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (T = 25°C, V = 50 V, V = 10 V,  
W
ZZ  
= Work Week  
= Lot Traceability  
J
DD  
GS  
I
= 25 A, L = 0.1 mH, R = 25 ꢂ)  
L(pk)  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
†
Device  
Package  
Shipping  
NVMFD5485NLT1G  
NVMFD5485NLT3G  
NVMFD5485NLWFT1G  
NVMFD5485NLWFT3G  
DFN8  
1500/  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
(Pb−Free) Tape & Reel  
Parameter  
Symbol  
Value  
Unit  
DFN8 5000/  
Junction−to−Case − Steady State (Note 2)  
Junction−to−Ambient − Steady State (Note 3)  
R
3.9  
52  
°C/W  
(Pb−Free) Tape & Reel  
DFN8 1500/  
ꢀ
ꢀ
JC  
R
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted to an ideal (infinite) heat sink.  
(Pb−Free) Tape & Reel  
DFN8 5000/  
(Pb−Free) Tape & Reel  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Maximum current for pulses as long as 1 second are higher but are dependent  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2015 − Rev. 3  
NVMFD5485NL/D  
 
123456

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