NVMFD5485NL
Power MOSFET
60 V, 44 mW, 20 A, Dual N−Channel
Features
• Small Footprint (5x6 mm) for Compact Designs
• Low R
to Minimize Conduction Losses
DS(on)
www.onsemi.com
• Low Capacitance to Minimize Driver Losses
• 175°C Operating Temperature
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• NVMFD5485NLWF − Wettable Flank Option for Enhanced Optical
Inspection
44 mꢂ @ 10 V
60 mꢂ @ 4.5 V
60 V
20 A
• AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
Dual N−Channel
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D1
D2
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
Gate−to−Source Voltage
V
"20
19.5
V
GS
G1
G2
Continuous Drain
Current R
T
= 25°C
I
A
C
D
ꢀ
JC
T
C
= 100°C
13.8
S1
S2
(Notes 1, 2, 4)
Steady
State
Power Dissipation
T
C
= 25°C
= 100°C
= 25°C
P
38.5
19.2
5.3
W
A
D
R
(Notes 1, 2)
ꢀ
JC
MARKING DIAGRAM
T
C
D1 D1
Continuous Drain
Current R
T
A
I
1
D
S1
G1
S2
G2
D1
D1
D2
D2
ꢀ
JA
DFN8 5x6
(SO8FL)
T
A
= 100°C
3.8
(Notes 1, 3 & 4)
Steady
State
XXXXXX
AYWZZ
Power Dissipation
T
A
= 25°C
P
2.9
1.4
113
W
CASE 506BT
D
R
(Notes 1 & 3)
ꢀ
JA
T
A
= 100°C
D2 D2
Pulsed Drain Current
T
A
= 25°C, t = 10 ꢁ s
I
DM
A
p
XXXXXX = 5485NL
XXXXXX = (NVMFD5485NL) or
XXXXXX = 5485LW
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
XXXXXX = (NVMFD5485NLWF)
Source Current (Body Diode)
I
37
31
A
S
A
= Assembly Location
= Year
Y
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (T = 25°C, V = 50 V, V = 10 V,
W
ZZ
= Work Week
= Lot Traceability
J
DD
GS
I
= 25 A, L = 0.1 mH, R = 25 ꢂ)
L(pk)
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
NVMFD5485NLT1G
NVMFD5485NLT3G
NVMFD5485NLWFT1G
NVMFD5485NLWFT3G
DFN8
1500/
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
(Pb−Free) Tape & Reel
Parameter
Symbol
Value
Unit
DFN8 5000/
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 3)
R
3.9
52
°C/W
(Pb−Free) Tape & Reel
DFN8 1500/
ꢀ
ꢀ
JC
R
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted to an ideal (infinite) heat sink.
(Pb−Free) Tape & Reel
DFN8 5000/
(Pb−Free) Tape & Reel
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second are higher but are dependent
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
May, 2015 − Rev. 3
NVMFD5485NL/D