DATA SHEET
www.onsemi.com
MOSFET - Power, Dual
N-Channel
100 V, 26 mW, 28 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
26 mW @ 10 V
35 mW @ 4.5 V
100 V
28 A
NVMFD027N10MCL
D1
D2
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G1
G2
G
• AEC−Q101 Qualified and PPAP Capable
• NVMFWD027N10MCL − Wettable Flank Products
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
S1
DUAL N−CHANNEL
S2
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
1
V
DSS
DFN8 5x6
(SO8FL)
CASE 506BT
XXXXXX
AYWZZ
Gate−to−Source Voltage
V
GS
V
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
28
A
C
D
Current R
(Note 1)
q
JC
T
C
20
Steady
State
XXXXXX = Specific Device Code
Power Dissipation
(Note 1)
T
C
P
46
W
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
D
R
q
JC
T
C
= 100°C
23
Continuous Drain
Current R
T = 25°C
I
7.4
5.2
3.1
1.6
115
A
D
q
JA
T = 100°C
A
(Notes 1, 2)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
ORDERING INFORMATION
R
(Notes 1, 2)
q
JA
T = 100°C
A
Device
Package Shipping†
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
NVMFD027N10MCLT1G
DFN8
(Pb−Free)
1500 /
Tape &
Reel
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
NVMFWD027N10MCLT1G
(Wettable Flanks)
Source Current (Body Diode)
I
S
35
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Single Pulse Drain−to−Source Avalanche
E
154
mJ
AS
Energy (I
= 1.3 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
3.29
48
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
October, 2021 − Rev. 0
NVMFD027N10MCL/D