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NVMFD027N10MCLT1G PDF预览

NVMFD027N10MCLT1G

更新时间: 2023-09-03 20:28:40
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 126K
描述
Dual N-Channel Power MOSFET 100 V, 28 A, 26 mΩ

NVMFD027N10MCLT1G 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Dual  
N-Channel  
100 V, 26 mW, 28 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
26 mW @ 10 V  
35 mW @ 4.5 V  
100 V  
28 A  
NVMFD027N10MCL  
D1  
D2  
Features  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G1  
G2  
G
AECQ101 Qualified and PPAP Capable  
NVMFWD027N10MCL Wettable Flank Products  
These Devices are PbFree, Halogen Free/BFR Free, Beryllium Free  
and are RoHS Compliant  
S1  
DUAL NCHANNEL  
S2  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
100  
20  
Unit  
V
1
V
DSS  
DFN8 5x6  
(SO8FL)  
CASE 506BT  
XXXXXX  
AYWZZ  
GatetoSource Voltage  
V
GS  
V
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
28  
A
C
D
Current R  
(Note 1)  
q
JC  
T
C
20  
Steady  
State  
XXXXXX = Specific Device Code  
Power Dissipation  
(Note 1)  
T
C
P
46  
W
A
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
D
R
q
JC  
T
C
= 100°C  
23  
Continuous Drain  
Current R  
T = 25°C  
I
7.4  
5.2  
3.1  
1.6  
115  
A
D
q
JA  
T = 100°C  
A
(Notes 1, 2)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
ORDERING INFORMATION  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
Device  
Package Shipping†  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
NVMFD027N10MCLT1G  
DFN8  
(PbFree)  
1500 /  
Tape &  
Reel  
Operating Junction and Storage Temperature  
Range  
T , T  
55 to  
+175  
°C  
J
stg  
NVMFWD027N10MCLT1G  
(Wettable Flanks)  
Source Current (Body Diode)  
I
S
35  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Single Pulse DraintoSource Avalanche  
E
154  
mJ  
AS  
Energy (I  
= 1.3 A)  
L(pk)  
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Value  
3.29  
48  
Unit  
JunctiontoCase Steady State (Note 1)  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using 1 in pad size, 2 oz. Cu pad.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
October, 2021 Rev. 0  
NVMFD027N10MCL/D  
 

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