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NVMFD020N06CT1G

更新时间： 2023-09-03 20:30:01
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 250K
描述
Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 16.3 mΩ, 32 A

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NVMFD020N06CT1G 数据手册

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MOSFET - Power, Dual  
N-Channel, DUAL SO8FL  
60 V, 20.3 mW, 27 A  
NVMFD020N06C  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• NVMFWD020N06C − Wettable Flank Option for Enhanced Optical  
Inspection  
60 V  
20.3 mW @ 10 V  
27 A  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol Value Units  
V
60  
20  
27  
19  
31  
15  
8
V
V
A
DSS  
V
GS  
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
D
C
q
JC  
T
C
(Notes 1, 3)  
MARKING  
DIAGRAM  
Power Dissipation  
Steady  
State  
T
C
P
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
1
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
XXXXXX  
AYWZZ  
DFN8 5x6  
(SO8FL)  
q
JA  
T = 100°C  
A
6
(Notes 1, 2, 3)  
CASE 506BT  
Power Dissipation  
Steady  
State  
T = 25°C  
P
3.1  
1.5  
98  
W
A
D
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
XXXXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
W
ZZ  
= Work Week  
= Lot Traceability  
J
stg  
Source Current (Body Diode)  
I
25  
16  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 5.7 A  
)
L
pk  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Lead Temperature Soldering Reflow for  
Soldering Purposes (1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
March, 2020 − Rev. 1  
NVMFD020N06C/D  
 
1234567

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