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NVMD6N03R2G PDF预览

NVMD6N03R2G

更新时间： 2024-01-28 07:35:06
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 343K
描述
Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8

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NVMD6N03R2G 数据手册

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NTMD6N03R2,  
NVMD6N03R2  
Power MOSFET  
30 V, 6 A, Dual N--Channel SOIC--8  
http://onsemi.com  
Features  
Designed for use in low voltage, high speed switching applications  
Ultra Low On--Resistance Provides  
V
R
Typ  
I Max  
D
DSS  
DS(ON)  
Higher Efficiency and Extends Battery Life  
-- R DS(on) = 0.024 Ω, VGS = 10 V (Typ)  
30 V  
24 mΩ @ V = 10 V  
6.0 A  
GS  
-- R DS(on) = 0.030 Ω, VGS = 4.5 V (Typ)  
Miniature SOIC--8 Surface Mount Package Saves Board Space  
Diode is Characterized for Use in Bridge Circuits  
Diode Exhibits High Speed, with Soft Recovery  
AEC Q101 Qualified -- NVMD6N03R2  
N--Channel  
D
D
These Devices are Pb--Free and are RoHS Compliant  
G
G
Applications  
S
S
DC--DC Converters  
Computers  
Printers  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Cellular and Cordless Phones  
Disk Drives and Tape Drives  
D1 D1 D2 D2  
8
8
1
E6N03  
AYWW G  
G
SOIC--8  
CASE 751  
STYLE 11  
MAXIMUM RATINGS (T = 25C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
1
Drain--to--Source Voltage  
Gate--to--Source Voltage -- Continuous  
Drain Current  
V
30  
Volts  
Volts  
DSS  
S1 G1 S2 G2  
V
20  
GS  
E6N03 = Specific Device Code  
-- Continuous @ T = 25C  
I
6.0  
30  
Adc  
Apk  
A
D
A
Y
= Assembly Location  
-- Single Pulse (tp 10 ms)  
I
DM  
= Year  
Total Power Dissipation  
P
Watts  
WW  
G
= Work Week  
= Pb--Free Package  
D
@ T = 25C (Note 1)  
2.0  
A
@ T = 25C (Note 2)  
1.29  
A
(Note: Microdot may be in either location)  
Operating and Storage Temperature  
Range  
T , T  
J
-- 5 5 t o  
+150  
C  
stg  
ORDERING INFORMATION  
Single Pulse Drain--to--Source Avalanche  
E
325  
mJ  
AS  
Energy -- Starting T = 25C  
J
†
(V = 30 Vdc, V = 5.0 Vdc,  
Device  
Package  
Shipping  
DD  
DS  
GS  
V
= 20 Vdc, Peak I = 9.0 Apk,  
L
L = 10 mH, R = 25 Ω)  
G
NTMD6N03R2G  
NVMD6N03R2G  
SOIC--8  
(Pb--Free)  
2500 / Tape &  
Reel  
Thermal Resistance  
-- Junction--to--Ambient (Note 1)  
-- Junction--to--Ambient (Note 2)  
R
θ
C/W  
C  
JA  
62.5  
97  
SOIC--8  
(Pb--Free)  
2500 / Tape &  
Reel  
Maximum Lead Temperature for Soldering  
Purposes for 10 seconds  
T
260  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to an FR4 board using 1pad size, t 10 s  
2. When surface mounted to an FR4 board using 1pad size, t = steady state  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
October, 2011 -- Rev. 3  
NTMD6N03R2/D  
12345678

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NVMD6N03R2G 替代型号

型号 品牌 替代类型 描述 数据表
NTMD6N02R2G ONSEMI

类似代替

 Power MOSFET 6.0 Amps, 20 Volts
NTMD6N03R2G ONSEMI

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NTMD4N03R2G ONSEMI

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 Power MOSFET 4 A, 30 V, N−Channel SO−8 Du

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