Datasheet > NVMD4N03

NVMD4N03

更新时间： 2024-11-23 12:04:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	126K
描述
Power MOSFET 4 A, 30 V, NâChannel SOâ8 Dual

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中文翻译

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NVMD4N03 数据手册

NTMD4N03, NVMD4N03

Power MOSFET

4 A, 30 V, N−Channel SO−8 Dual

Features

• Designed for use in low voltage, high speed switching applications

• Ultra Low On−Resistance Provides

http://onsemi.com

Higher Efficiency and Extends Battery Life

− R

= 0.048 W, V = 10 V (Typ)

DS(on)

= 0.065 W, V = 4.5 V (Typ)

Typ

I Max

DSS

DS(ON)

• Miniature SO−8 Surface Mount Package − Saves Board Space

• Diode is Characterized for Use in Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

30 V

48 mW @ V = 10 V

4.0 A

• NVMD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable*

N−Channel

• These Devices are Pb−Free and are RoHS Compliant

Applications

• DC−DC Converters

• Computers

• Printers

• Cellular and Cordless Phones

• Disk Drives and Tape Drives

MARKING DIAGRAM*

AND PIN ASSIGNMENT

D1 D1 D2 D2

SOIC−8

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

SUFFIX NB

CASE 751

STYLE 11

E4N03

AYWW G

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

DSS

"20

S1 G1 S2 G2

− Continuous @ T = 25°C

− Single Pulse (tp ≤ 10 ms)

4.0

Adc

Apk

E4N03 = Specific Device Code

Total Power Dissipation

2.0

°C

= Assembly Location

= Year

= Work Week

@ T = 25°C (Note 1)

Operating and Storage

Temperature Range

T , T

−55 to

+150

stg

= Pb−Free Package

(Note: Microdot may be in either location)

Single Pulse Drain−to−Source

*For additional marking information, refer to

Application Note AND8002/D.

Avalanche Energy − Starting T = 25°C

(V = 25 Vdc, V = 5.0 Vdc,

Peak I = 4.45 Apk, L = 8 mH,

= 25 W)

ORDERING INFORMATION

Thermal Resistance

62.5

260

°C/W

°C

− Junction−to−Ambient (Note 1)

†

Device

Package

SOIC−8

(Pb−Free)

Shipping

2500 / Tape &

Reel

NTMD4N03R2G

Maximum Lead Temperature for

Soldering Purposes for 10 seconds

NVMD4N03R2G*

SOIC−8

(Pb−Free)

2500 / Tape &

Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D

1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s

Semiconductor Components Industries, LLC, 2013

Publication Order Number:

August, 2013 − Rev. 4

NTMD4N03R2/D

12 3 4 5 6 7 8

中文翻译

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与NVMD4N03相关器件

型号	品牌	获取价格	描述	数据表
NVMD4N03R2G	ONSEMI	获取价格	Power MOSFET 4 A, 30 V, NâChannel SOâ8 Du
NVMD6N03R2	ONSEMI	获取价格	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
NVMD6N03R2G	ONSEMI	获取价格	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
NVMD6N04R2G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，40V，5.8A，34mΩ
NVMD6P02	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NVMD6P02R2G	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NVMFD020N06CT1G	ONSEMI	获取价格	Power MOSFET Power, N-Channel, DUAL SO8FL, 60
NVMFD024N06CT1G	ONSEMI	获取价格	Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 2
NVMFD027N10MCLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 100 V, 28 A, 26 m
NVMFD030N06CT1G	ONSEMI	获取价格	Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7

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