Datasheet > NVMD6N03R2

NVMD6N03R2

更新时间： 2024-11-19 12:06:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	343K
描述
Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8

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中文翻译

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NVMD6N03R2 数据手册

NTMD6N03R2,

NVMD6N03R2

Power MOSFET

30 V, 6 A, Dual N--Channel SOIC--8

http://onsemi.com

Features

 Designed for use in low voltage, high speed switching applications

 Ultra Low On--Resistance Provides

Typ

I Max

DSS

DS(ON)

Higher Efficiency and Extends Battery Life

-- R _DS(on)= 0.024 Ω, V_GS= 10 V (Typ)

30 V

24 mΩ @ V = 10 V

6.0 A

-- R _DS(on)= 0.030 Ω, V_GS= 4.5 V (Typ)

 Miniature SOIC--8 Surface Mount Package Saves Board Space

 Diode is Characterized for Use in Bridge Circuits

 Diode Exhibits High Speed, with Soft Recovery

 AEC Q101 Qualified -- NVMD6N03R2

N--Channel

 These Devices are Pb--Free and are RoHS Compliant

Applications

 DC--DC Converters

 Computers

 Printers

MARKING DIAGRAM &

PIN ASSIGNMENT

 Cellular and Cordless Phones

 Disk Drives and Tape Drives

D1 D1 D2 D2

E6N03

AYWW G

SOIC--8

CASE 751

STYLE 11

MAXIMUM RATINGS (T = 25C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain--to--Source Voltage

Gate--to--Source Voltage -- Continuous

Drain Current

Volts

DSS

S1 G1 S2 G2

20

E6N03 = Specific Device Code

-- Continuous @ T = 25C

6.0

Adc

Apk

= Assembly Location

-- Single Pulse (tp  10 ms)

= Year

Total Power Dissipation

Watts

= Work Week

= Pb--Free Package

@ T = 25C (Note 1)

2.0

@ T = 25C (Note 2)

1.29

(Note: Microdot may be in either location)

Operating and Storage Temperature

Range

T , T

-- 5 5 t o

+150

C

stg

ORDERING INFORMATION

Single Pulse Drain--to--Source Avalanche

325

Energy -- Starting T = 25C

†

(V = 30 Vdc, V = 5.0 Vdc,

Device

Package

Shipping

= 20 Vdc, Peak I = 9.0 Apk,

L = 10 mH, R = 25 Ω)

NTMD6N03R2G

NVMD6N03R2G

SOIC--8

(Pb--Free)

2500 / Tape &

Reel

Thermal Resistance

-- Junction--to--Ambient (Note 1)

-- Junction--to--Ambient (Note 2)

C/W

C

62.5

SOIC--8

(Pb--Free)

2500 / Tape &

Reel

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

260

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1 pad size, t  10 s

2. When surface mounted to an FR4 board using 1 pad size, t = steady state



Semiconductor Components Industries, LLC, 2011

Publication Order Number:

October, 2011 -- Rev. 3

NTMD6N03R2/D

12 3 4 5 6 7 8

中文翻译

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与NVMD6N03R2相关器件

型号	品牌	获取价格	描述	数据表
NVMD6N03R2G	ONSEMI	获取价格	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
NVMD6N04R2G	ONSEMI	获取价格	双 N 沟道，功率 MOSFET，40V，5.8A，34mΩ
NVMD6P02	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NVMD6P02R2G	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NVMFD020N06CT1G	ONSEMI	获取价格	Power MOSFET Power, N-Channel, DUAL SO8FL, 60
NVMFD024N06CT1G	ONSEMI	获取价格	Power MOSFET, N-Channel, DUAL SO8FL, 60 V, 2
NVMFD027N10MCLT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET 100 V, 28 A, 26 m
NVMFD030N06CT1G	ONSEMI	获取价格	Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7
NVMFD5483NL	ONSEMI	获取价格	Power MOSFET Dual NâChannel
NVMFD5483NLT1G	ONSEMI	获取价格	Power MOSFET Dual NâChannel

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